MT18VDDT12872AY-40BF1 Micron Technology Inc, MT18VDDT12872AY-40BF1 Datasheet - Page 13

• Manufacturer Part Number: MT18VDDT12872AY-40BF1
• Description: MODULE DDR 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT12872AY-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 12: I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12; notes appear on pages 19–21; 0°C
pdf: 09005aef80814e61, source: 09005aef80a43eed
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN
PARAMETER/CONDITION
NOTE:
OPERATING CURRENT: One device bank; Active-Precharge;
t
changing once per clock cyle; Address and control inputs changing
once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 2;
and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks
idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
changing once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge;
DM and DQS inputs changing twice per clock cycle; Address and
other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once per
clock cycle;
twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs
(BL = 4) with auto precharge,
Address and control inputs change only during Active READ, or
WRITE commands
RC =
CK =
a: Value calculated as one module rank in this operating condition, and all other module ranks in I
b: Value calculated reflects all module ranks in this operating condition.
t
t
t
RC (MIN);
CK MIN; CKE = HIGH; Address and other control inputs
CK =
t
RC =
t
t
CK =
CK (MIN); I
t
DD
RC (MIN);
t
CK =
t
CK (MIN); DQ, DM, and DQS inputs changing
Specifications and Conditions – 256MB
t
CK (MIN); DQ, DM and DQS inputs
OUT
t
RC =
t
CK =
t
t
CK =
CK =
= 0mA
t
t
RC =
RAS (MAX);
t
0.2V
t
CK (MIN); CKE = (LOW)
IN
CK (MIN); CKE = LOW
t
CK (MIN); I
= V
t
RC (MIN);
REF
for DQ, DQS, and DM
t
CK =
OUT
256MB, 512MB, 1GB (x72, ECC, DR), PC3200
t
CK =
t
t
= 0mA; Address
REFC =
REFC = 15.625µs
t
CK (MIN); DQ,
t
CK (MIN);
t
RFC (MIN)
T
A
13
+70°C; V
I
I
I
DD
I
I
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
DD4W
SYM
I
I
DD3N
I
DD5A
I
I
DD2P
DD2F
DD3P
DD4R
184-PIN DDR SDRAM UDIMM
DD0
DD1
DD5
DD6
DD7
= V
a
a
b
b
a
b
b
b
b
a
b
a
DD
Q = +2.6V ±0.1V
MAX
1,062
1,242
1,242
1,422
2,160
3,222
-40B
450
225
450
27
54
36
DD
2
P
UNITS
(CKE LOW) mode.
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
©2004 Micron Technology, Inc.
NOTES
21, 28,
21, 28,
21, 41
21, 41
21, 41
24, 43
20, 42
43
44
43
21
43
9