MT18VDDF12872HY-335F1 Micron Technology Inc, MT18VDDF12872HY-335F1 Datasheet - Page 2

• Manufacturer Part Number: MT18VDDF12872HY-335F1
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HY-335F1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.53A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1173; MT18VDDF12872HY-335F1

Table 2:
Table 3:
PDF: 09005aef80e4880c/Source: 09005aef80e487d7
DDF18C128x72H.fm - Rev. B 10/07 EN
Parameter
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT18VDDF12872HG-40B__
MT18VDDF12872HY-40B__
MT18VDDF12872HG-335__
MT18VDDF12872HY-335__
MT18VDDF12872HG-26A__
MT18VDDF12872HG-265__
Addressing
Part Numbers and Timing Parameters – 1GB
Base device: MT46V64M8,
2
Notes:
1. Data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDF12872HY-335F1.
Module
Density
1GB
1GB
1GB
1GB
1GB
1GB
1
512Mb DDR SDRAM
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
1GB (x72, ECC, DR) 200-Pin DDR SDRAM SODIMM
2
Bandwidth
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
Data Rate
1GB
8K
©2004 Micron Technology, Inc. All rights reserved.
(CL-
Clock Cycles
2.5-3-3
2.5-3-3
2.5-3-3
t
3-3-3
3-3-3
2-3-3
RCD-
Features
t
RP)