MT18VDDF12872HY-40BF1 Micron Technology Inc, MT18VDDF12872HY-40BF1 Datasheet - Page 13

• Manufacturer Part Number: MT18VDDF12872HY-40BF1
• Description: MODULE DDR 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HY-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 12: I
DDR SDRAM devices only;
Notes: 1–5, 8, 10, 12, 46; notes appear on pages 16–18; 0°C
pdf: 09005aef80e4880c, source: 09005aef80e487d7
DDAF18C128x72HG.fm - Rev. A 10/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
t
and control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active-Read-Precharge; Burst = 4;
t
changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle;
Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle;
(MIN);
cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-
down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH;
t
clock cycle; Address and other control inputs changing once per clock cycle
OPERATING CURRENT: Burst = 2;
active; Address and control inputs changing once per clock cycle;
(MIN);
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank
active; Address and control inputs changing once per clock cycle;
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle
AUTO REFRESH BURST CURRENT:
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs
auto precharge,
control inputs change only during Active READ, or WRITE commands
NOTE:
CK =
RC =
RC =
a: Value calculated as one module rank in this operating condition, and all other module ranks in I
b: Value calculated reflects all module ranks in this operating condition.
t
t
t
RAS (MAX);
CK (MIN); DQ, DM and DQS inputs changing once per clock cycle; Address
RC (MIN);
I
CKE = HIGH; Address and other control inputs changing once per clock
OUT
IN
= V
= 0mA
REF
t
CK =
DD
t
for DQ, DQS, and DM
RC = minimum
t
CK =
t
CK =
t
CK (MIN); CKE = LOW
Specifications and Conditions – 1GB
t
CK =
t
CK (MIN); I
t
CK (MIN); DQ, DM and DQS inputs changing twice per
t
CK (MIN);
0.2V
t
RC allowed;
Reads; Continuous burst; One device bank
OUT
CKE = (LOW)
= 0mA; Address and control inputs
t
CK =
t
CK (MIN); Address and
t
t
REFC =
REFC = 7.8125µs
One device bank active
13
T
A
t
t
RFC (MIN)
RC =
(Burst = 4) with
+70°C; V
t
t
CK =
CK =
t
CK =
t
RC (MIN);
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
CK
CK
t
DD
CK
1GB (x72, ECC, DR) PC3200
, V
DD
;
Q = +2.6V ±0.1V
200-PIN DDR SODIMM
I
I
I
I
I
I
I
DD4W
SYM
DD3N
I
DD5A
I
I
I
I
DD2P
DD2F
DD3P
DD4R
DD0
DD1
DD5
DD6
DD7
a
a
b
b
a
b
b
b
b
a
b
a
MAX
1,440
1,710
1,080
1,755
1,800
6,210
4,095
-40B
990
810
198
90
90
DD
2p (CKE LOW) mode.
UNITS
©2004 Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28, 42
21, 28, 42
NOTES
20, 40
20, 40
20, 40
20, 42
24, 42
20, 41
43
20
9