MT16LSDF6464HY-13ED2 Micron Technology Inc, MT16LSDF6464HY-13ED2 Datasheet - Page 18
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MT16LSDF6464HY-13ED2
Manufacturer Part Number
MT16LSDF6464HY-13ED2
Description
MODULE SDRAM 512MB 144-SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16LSDF6464HY-13ED2.pdf
(22 pages)
Specifications of MT16LSDF6464HY-13ED2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
144-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 17: EEPROM Operating Modes
Table 16: EEPROM Device Select Code
Most significant bit (b7) is sent first
SDA Out
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
Memory area select code (two arrays)
Protection register select code
MODE
Current address READ
Random address READ
Sequential READ
Byte WRITE
Page WRITE
SDA In
SCL
t
SU:STA
Figure 9: SPD EEPROM Timing Diagram
t
F
t
RW# BIT
HD:STA
t
t AA
LOW
1
0
1
1
0
0
t
t
V
V
V
V
HIGH
HD:DAT
b7
IH
IH
IH
IH
1
0
DEVICE TYPE IDENTIFIER
WC
V
V
or V
or V
or V
or V
IL
IL
18
IL
IL
IL
IL
b6
0
1
t
DH
BYTES
≤16
t
≥1
R
1
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t
SU:DAT
START, device select, RW = 1
START, device select, RW = 0, Address
RESTART, device select, RW = 1
similar to current or random address READ
START, device select, RW = 0
START, device select, RW# = 0
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
b4
0
0
SA2
SA2
INITIAL SEQUENCE
b3
CHIP ENABLE
©2006 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t
SU:STO
t
BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0