MT18VDDT6472AY-335K1 Micron Technology Inc, MT18VDDT6472AY-335K1 Datasheet
MT18VDDT6472AY-335K1
Specifications of MT18VDDT6472AY-335K1
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MT18VDDT6472AY-335K1 Summary of contents
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... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin UDIMM (MO-206 R/C B) Marking 2 ≤ +70°C) A ≤ +85° module offerings ...
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... MT18VDDT6472AG-40B__ 512MB MT18VDDT6472AY-40B__ 512MB MT18VDDT6472AG-335__ 512MB MT18VDDT6472AY-335__ 512MB MT18VDDT6472AG-262__ 512MB MT18VDDT6472AG-26A__ 512MB MT18VDDT6472AY-26A__ 512MB MT18VDDT6472AG-265__ 512MB MT18VDDT6472AY-265__ 512MB Table 4: Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V64M8, Module 2 Part Number Density MT18VDDT12872AG-40B__ 1GB MT18VDDT12872AY-40B__ 1GB MT18VDDT12872AG-335__ 1GB MT18VDDT12872AY-335__ ...
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Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 24 DQ17 47 2 DQ0 25 DQS2 48 3 Vss 26 Vss 49 4 DQ1 ...
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Table 6: Pin Descriptions Symbol Type A0–A12 Input BA0, BA1 Input CK0, CK0#, Input CK1, CK1#, CK2, CK2# CKE0, CKE1 Input DM0–DM8 Input RAS#, CAS#, WE# Input S0#, S1# Input SA0–SA2 Input SCL Input CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA Vdd/VddQ Supply ...
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Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DM0 DM CS# DQS DQ DQ0 DQ1 DQ DQ2 DQ DQ DQ3 DQ4 DQ DQ DQ5 DQ6 DQ DQ7 DQ DQS1 DM1 DM CS# DQS DQ8 DQ DQ DQ9 ...
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... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...
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Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...
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... PDF: 09005aef80814e61/Source: 09005aef807f8acb DD18C64_128x72A.fm - Rev. D 9/08 EN 512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM ® memory modules are designed to optimize signal integrity through carefully Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 Electrical Specifications Component Speed Grade ...
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Idd Specifications Table 9: Idd Specifications and Conditions – 512MB (Die Revision K) Values shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one ...
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Table 10: Idd Specifications and Conditions – 512MB (All Other Die Revisions) Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one bank ...
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Table 11: Idd Specifications and Conditions – 1GB Values are for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current ...
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Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input leakage current GND to ...
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Module Dimensions Figure 3: 184-Pin DDR UDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP U19 U10 U11 Pin 184 49.53 (1.95) TYP Notes: ...