MT9VDDF3272Y-335K1 Micron Technology Inc, MT9VDDF3272Y-335K1 Datasheet
MT9VDDF3272Y-335K1
Specifications of MT9VDDF3272Y-335K1
Related parts for MT9VDDF3272Y-335K1
MT9VDDF3272Y-335K1 Summary of contents
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DDR SDRAM RDIMM MT9VDDF3272 – 256MB MT9VDDF6472 – 512MB For component data sheets, refer to Micron’s Web site: Features • 184-pin, registered dual in-line memory module (RDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 256MB (32 Meg ...
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... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9VDDF3272Y-335G3. PDF: 09005aef8082c948/Source: 09005aef807d56a1 ddf9c32_64x72.fm - Rev. C 10/08 EN ...
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... Table 4: Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V64M8, Module 2 Part Number Density 512MB MT9VDDF6472G-40B__ 512MB MT9VDDF6472Y-40B__ MT9VDDF6472G-335__ 512MB MT9VDDF6472Y-335__ 512MB MT9VDDF6472G-265__ 512MB 512MB MT9VDDF6472Y-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. ...
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Table 6: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0# CKE0 DM0–DM8 RAS#, CAS#, WE# RESET# S0# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA DDSPD V REF PDF: 09005aef8082c948/Source: 09005aef807d56a1 ddf9c32_64x72.fm - ...
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Functional Block Diagrams Figure 3: Functional Block Diagram R/C G (-40B, -335, -265) RS0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 U6 S0# e BA0, BA1 g A0–A12 i RAS CAS# e CKE0 ...
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Figure 4: Functional Block Diagram R/C A (-335, -262, -26A, -265) RS0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 U11, U13 R e S0# g BA0, BA1 i A0–A12 s RAS# t CAS# e CKE0 r WE# ...
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... The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for DDR SDRAM modules effectively consists of a single 2n-bit-wide, one- clock-cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins ...
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Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...
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I Specifications DD Table 9: I Specifications and Conditions – 256MB (Die Revision K) DD Values are for MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating ...
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Table 10: I Specifications and Conditions – 256MB (All Other Die Revisions) DD Values are for MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one device ...
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Table 11: I Specifications and Conditions – 512MB DD Values are for MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one device bank active-precharge current: t ...
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Register and PLL Specifications Table 12: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol high-level IH DC command, address input voltage low-level IL DC input voltage command, address AC high-level V ...
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Table 13: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...
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Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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Module Dimensions Figure 5: 184-Pin DDR RDIMM (-40B, -335, -265) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP 64.77 (2.55) Pin 184 Notes: ...
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Figure 6: 184-Pin DDR RDIMM (-335, -262, -26A, -265) 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) 1.27 (0.05) TYP TYP 1.0 (0.039) 64.77 (2.55) TYP No components this side ...