MT8LSDT3264AY-133D2 Micron Technology Inc, MT8LSDT3264AY-133D2 Datasheet - Page 14

• Manufacturer Part Number: MT8LSDT3264AY-133D2
• Description: MODULE SDRAM 256MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8LSDT3264AY-133D2

• Memory Type: SDRAM
• Memory Size: 256MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.08A
• Number Of Elements: 8
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1228; MT8LSDT3264AY-133D2

Electrical Specifications
Table 10:
Table 11:
Table 12:
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Parameter/Condition
Parameter/Condition
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;
0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;
0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
OUT
OUT
≤ V
≤ V
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions – 256MB Module
Notes: 1, 5, 6; notes appear on page 19; V
DDQ
DC Electrical Characteristics and Operating Conditions – 512MB Module
Notes: 1, 5, 6; notes appear on page 19; V
DDQ
IN
IN
≤ V
≤ V
OUT
OUT
DD
DD
OUT
OUT
= 4mA)
= 4mA)
= -4mA)
= -4mA)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Parameter
Voltage on V
Voltage on Inputs NC or I/O Pins Relative to V
Operating Temperature
T
T
Storage Temperature (plastic)
A
A
(Commercial)
(Industrial)
Command and Address
Inputs, CKE
CK, S#
DQ, DQMB
Command and Address
Inputs, CKE
CK, S#
DQ, DQMB
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
DD
, V
DDQ
Supply Relative to V
DD
DD
, V
, V
14
DDQ
DDQ
= +3.3V ±0.3V
= +3.3V ±0.3V
V
V
Symbol
Symbol
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
I
V
V
, V
V
I
V
, V
OZ
OH
SS
I
OZ
OL
OH
IH
I
OL
IL
I
IH
IL
I
DDQ
DDQ
SS
MIN
-0.3
MIN
-40
-20
2.4
-0.3
-5
-5
-80
-20
-10
-10
2.4
3
2
–
3
2
–
Electrical Specifications
V
V
DD
MAX
DD
MAX
3.6
0.8
0.4
40
20
3.6
0.8
0.4
5
5
–
80
20
10
10
+ 0.3
©2003 Micron Technology, Inc. All rights reserved.
–
MIN
+ 0.3
-40
-55
-1
-1
0
Units
Units
MAX
µA
µA
µA
µA
+150
+4.6
+4.6
V
V
V
V
+65
+85
V
µA
µA
µA
µA
V
V
V
V
V
Notes
Notes
Units
22
22
33
33
22
22
33
33
°C
°C
°C
V
V