MT18VDDF12872HG-335D1 Micron Technology Inc, MT18VDDF12872HG-335D1 Datasheet - Page 9

• Manufacturer Part Number: MT18VDDF12872HG-335D1
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HG-335D1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 167MHz
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1115

Serial Presence-Detect
Table 9:
Table 10:
Serial Presence-Detect Data
PDF: 09005aef80e4880c/Source: 09005aef80e487d7
DDF18C128x72H.fm - Rev. B 10/07 EN
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current: SCL = SDA = V
Power supply current: SCL clock frequency = 100 kHz
Parameter/Condition
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM DC Operating Conditions
Serial Presence-Detect EEPROM AC Operating Conditions
Notes:
OUT
IN
= 3mA
OUT
= GND to V
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
For the latest serial presence-detect data, refer to Micron’s SPD page:
www.micron.com/SPD.
= GND to V
DD
the falling or rising edge of SDA.
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
- 0.3V; All other inputs = V
DD
DD
1GB (x72, ECC, DR) 200-Pin DDR SDRAM SODIMM
SS
9
or V
DD
t
Symbol
t
t
t
t
t
WRC) is the time from a valid stop condition of a write
HD:DAT
HD:STA
SU:DAT
SU:STO
SU:STA
t
t
t
t
HIGH
LOW
f
WRC
t
t
BUF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SCL
AA
DH
t
t
t
R
F
I
Symbol
V
DDSPD
V
V
V
I
I
I
I
LO
SB
CC
OL
LI
IH
IL
Min
200
100
0.6
0.6
0.2
1.3
0.6
1.3
0.6
–
0
–
–
–
–
V
DDSPD
Min
–1.0
2.3
–
–
–
–
–
Serial Presence-Detect
Max
300
400
0.9
0.3
× 0.7 V
50
10
–
–
–
–
–
–
–
–
–
©2004 Micron Technology, Inc. All rights reserved.
V
DDSPD
DDSPD
Units
kHz
Max
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
3.6
0.4
2.0
10
10
30
+ 0.5
× 0.3
Notes
Units
1
2
2
3
4
mA
µA
µA
µA
V
V
V
V