MT8VDDT6464HDY-335F2 Micron Technology Inc, MT8VDDT6464HDY-335F2 Datasheet - Page 6

• Manufacturer Part Number: MT8VDDT6464HDY-335F2
• Description: MODULE DDR 512MB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464HDY-335F2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 167MHz
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 800mA
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1294; MT8VDDT6464HDY-335F2

General Description
Serial Presence-Detect Operation
PDF: 09005aef80765fab/Source: 09005aef806e1d28
DD8C32_64x64HD.fm - Rev. E 11/08 EN
The MT8VDDT3264HD and MT8VDDT6464HD are high-speed, CMOS, dynamic
random access 256MB and 512MB memory modules organized in a x64 configuration.
These modules use DDR SDRAM devices with four internal banks.
DDR SDRAM modules use a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 2n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for DDR SDRAM modules effectively consists of a single
2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corre-
sponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in
data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during
READs and by the memory controller during WRITEs. DQS is edge-aligned with data for
READs and center-aligned with data for WRITEs.
DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing
of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Commands are registered at every positive edge of CK. Input data is registered on both
edges of DQS, and output data is referenced to both edges of DQS, as well as to both
edges of CK.
DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module
type and various DDR SDRAM organizations and timing parameters. The remaining 128
bytes of storage are available for use by the customer. System READ/WRITE operations
between the master (system logic) and the slave EEPROM device occur via a standard
I
which provide eight unique DIMM/EEPROM addresses. Write protect (WP) is connected
to V
2
C bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA[2:0],
SS
, permanently disabling hardware write protect.
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2004 Micron Technology, Inc. All rights reserved.