TLP168J(TPR,U,C,F) Toshiba, TLP168J(TPR,U,C,F) Datasheet - Page 24

• Manufacturer Part Number: TLP168J(TPR,U,C,F)
• Description: PHOTOCOUPLER TRIAC OUT 4-MSOP
• Manufacturer: Toshiba

Specifications of TLP168J(TPR,U,C,F)

• Voltage - Isolation: 2500Vrms
• Number Of Channels: 1
• Voltage - Off State: 600V
• Output Type: AC, Triac, Zero Cross
• Current - Gate Trigger (igt) (max): 3mA
• Current - Hold (ih): 600µA
• Current - Dc Forward (if): 6mA
• Current - Output / Channel: 70mA
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Output Device: PhotoTriac
• Isolation Voltage: 2500 V
• Peak Output Voltage (vdrm): 600 V
• Maximum Input Voltage: 240 VAC
• Maximum Output Voltage: 600 V
• Configuration: 1 Channel
• Maximum Continuous Output Current: 70 mA
• Maximum Input Current: 7.5 mA
• Maximum Operating Temperature: + 100 C
• Maximum Reverse Diode Voltage: 5 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Zero-crossing Circuit: Yes
• Number Of Elements: 1
• Forward Voltage: 1.7V
• Repetitive Peak Off-state Volt: 600V
• Operating Temp Range: -10C to 85C
• Output Current: 70mA
• Package Type: MFSOP
• Reverse Breakdown Voltage: 5V
• Mounting: Surface Mount
• Pin Count: 4
• Trigger Current: 3mA
• Zero Crossing Circuit: Yes
• Operating Temperature Classification: Commercial
• Forward Current: 20mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP168J(TPR,U,C,F)); TLP168JFTR

4
Photocouplers for IGBT/MOSFET Gate Drive
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
TLP151*
TLP151A*
TLP155E
TLP2451
TLP2451A*
TLP350
TLP350F
TLP350H*
TLP350HF*
TLP351
TLP351F
TLP351A*
TLP351AF*
TLP351H*
TLP351HF*
TLP352*
TLP352F*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
Selection Guide
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
8
1
8
1
8
1
8
1
8
1
8
1
6
1
6
1
7
2
7
2
7
2
7
2
7
2
7
2
7
2
5
5
6
3
6
3
6
3
: Design which meets safety standard/approval pending as of January 2011
6
3
6
3
6
3
6
3
4
3
4
3
5
4
5
4
5
4
5
4
5
4
5
4
5
4
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
Low power dissipation
DIP8
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
T
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
DIP8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
opr
opr
opr
opr
opr
opr
= 110°C (max)
= 100°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.7 μs
0.5 μs
0.2 μs
0.7 μs
0.5 μs
0.5 μs
0.5 μs
0.7 μs
0.7 μs
0.7 μs
0.2 μs
24
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Output
±0.6 A
±0.6 A
±0.6 A
±2.5 A
±2.5 A
±2.5 A
±0.6 A
±0.6 A
±6.0 A
: Design which meets safety standard/approval pending as of January 2011
5 mA
7.5 mA
5 mA
5 mA
5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
I
FHL
Vrms
Vrms
Vrms
Vrms
Vrms
3750
3750
3750
3750
3750
3750
Vrms
3750
Vrms
3750
Vrms
3750
Vrms
BVs
UL/cUL TÜV
/
/
/
/
/
/
/
/
/
/
/
Safety Standards
VDE
(1)
(1)
BSI
(2)
IEC