TLP168J(TPR,U,C,F) Toshiba, TLP168J(TPR,U,C,F) Datasheet - Page 2

PHOTOCOUPLER TRIAC OUT 4-MSOP

TLP168J(TPR,U,C,F)

Manufacturer Part Number
TLP168J(TPR,U,C,F)
Description
PHOTOCOUPLER TRIAC OUT 4-MSOP
Manufacturer
Toshiba
Datasheets

Specifications of TLP168J(TPR,U,C,F)

Voltage - Isolation
2500Vrms
Number Of Channels
1
Voltage - Off State
600V
Output Type
AC, Triac, Zero Cross
Current - Gate Trigger (igt) (max)
3mA
Current - Hold (ih)
600µA
Current - Dc Forward (if)
6mA
Current - Output / Channel
70mA
Mounting Type
Surface Mount
Package / Case
4-SMD
Output Device
PhotoTriac
Isolation Voltage
2500 V
Peak Output Voltage (vdrm)
600 V
Maximum Input Voltage
240 VAC
Maximum Output Voltage
600 V
Configuration
1 Channel
Maximum Continuous Output Current
70 mA
Maximum Input Current
7.5 mA
Maximum Operating Temperature
+ 100 C
Maximum Reverse Diode Voltage
5 V
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Zero-crossing Circuit
Yes
Number Of Elements
1
Forward Voltage
1.7V
Repetitive Peak Off-state Volt
600V
Operating Temp Range
-10C to 85C
Output Current
70mA
Package Type
MFSOP
Reverse Breakdown Voltage
5V
Mounting
Surface Mount
Pin Count
4
Trigger Current
3mA
Zero Crossing Circuit
Yes
Operating Temperature Classification
Commercial
Forward Current
20mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP168J(TPR,U,C,F))
TLP168JFTR

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Recommended Operating Conditions
Individual Electrical Characteristics
Coupled Electrical Characteristics
Supply voltage
Forward current
Peak on−state current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance (input to output)
Isolation resistance
Isolation voltage
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise of off−
state voltage
Critical rate of rise of
commutating voltage
Characteristic
Characteristic
Characteristic
dv / dt(c)
Symbol
Symbol
dv / dt
I
V
BV
DRM
V
I
V
C
C
R
I
I
I
FT
TM
IH
R
H
IH
F
T
S
s
(Ta = 25°C)
S
Symbol
(Ta = 25°C)
V
T
I
I
TP
opr
AC
F
I
V
V = 0, f = 1 MHz
V
I
V
V
I
V
I
I
V
V
V
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
F
TM
T
F
F
R
DRM
in
in
T
T
S
S
=10 mA
= 15 mA
= Rated I
= Rated I
= 3V
= Rated V
2
= 3 V
= 0, f = 1 MHz
= 500 V, R.H. ≤ 60%
= 240 Vrms, Ta = 85°C
= 60 Vrms
= 70 mA
= 600 V
Min
−10
4.5
Test Condition
Test Condition
FT
FT
DRM
Typ.
6
Max
240
7.5
85
1
Unit
Vac
mA
°C
A
5×10
2500
Min
Min
200
1.2
10
5000
5000
Typ.
Typ.
10
500
200
1.4
1.7
0.6
0.2
0.8
30
10
14
2008-11-10
1000
Max
Max
TLP168J
600
1.7
2.8
10
50
3
V / μs
V / μs
Vrms
Unit
Unit
Vdc
mA
mA
μA
μA
pF
nA
pF
Ω
V
V
V

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