TLP112 Toshiba, TLP112 Datasheet - Page 24
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TLP112
Manufacturer Part Number
TLP112
Description
TRANSCOUPLER HS TRANS OUT 5-MSOP
Manufacturer
Toshiba
Specifications of TLP112
Number Of Channels
1
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
10% @ 16mA
Voltage - Output
15V
Current - Output / Channel
8mA
Current - Dc Forward (if)
25mA
Output Type
Transistor with Vcc
Mounting Type
Surface Mount
Package / Case
5-MSOP
No. Of Channels
1
Isolation Voltage
2.5kV
Optocoupler Output Type
Phototransistor
Input Current
16mA
Output Voltage
15V
Opto Case Style
Mini-Flat
No. Of Pins
5
Approval Bodies
UL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vce Saturation (max)
-
Current Transfer Ratio (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TLP112
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP112(F)
Manufacturer:
NEC
Quantity:
1 848
Part Number:
TLP112(F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP112A
Manufacturer:
ANPEC
Quantity:
3 000
Company:
Part Number:
TLP112A
Manufacturer:
TOS
Quantity:
5 510
Part Number:
TLP112A
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP112A(TPL)
Manufacturer:
NEC
Quantity:
203
Part Number:
TLP112A(TPL,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TLP112ATPR
Manufacturer:
NEC
Quantity:
17
4
Photocouplers for IGBT/MOSFET Gate Drive
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
TLP151*
TLP151A*
TLP155E
TLP2451
TLP2451A*
TLP350
TLP350F
TLP350H*
TLP350HF*
TLP351
TLP351F
TLP351A*
TLP351AF*
TLP351H*
TLP351HF*
TLP352*
TLP352F*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
Selection Guide
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
8
1
8
1
8
1
8
1
8
1
8
1
6
1
6
1
7
2
7
2
7
2
7
2
7
2
7
2
7
2
5
5
6
3
6
3
6
3
: Design which meets safety standard/approval pending as of January 2011
6
3
6
3
6
3
6
3
4
3
4
3
5
4
5
4
5
4
5
4
5
4
5
4
5
4
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
Low power dissipation
DIP8
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
T
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
DIP8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
opr
opr
opr
opr
opr
opr
= 110°C (max)
= 100°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.7 μs
0.5 μs
0.2 μs
0.7 μs
0.5 μs
0.5 μs
0.5 μs
0.7 μs
0.7 μs
0.7 μs
0.2 μs
24
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Output
±0.6 A
±0.6 A
±0.6 A
±2.5 A
±2.5 A
±2.5 A
±0.6 A
±0.6 A
±6.0 A
: Design which meets safety standard/approval pending as of January 2011
5 mA
7.5 mA
5 mA
5 mA
5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
I
FHL
Vrms
Vrms
Vrms
Vrms
Vrms
3750
3750
3750
3750
3750
3750
Vrms
3750
Vrms
3750
Vrms
3750
Vrms
BVs
UL/cUL TÜV
/
/
/
/
/
/
/
/
/
/
/
Safety Standards
VDE
(1)
(1)
BSI
(2)
IEC