TLP126(F) Toshiba, TLP126(F) Datasheet - Page 2

• Manufacturer Part Number: TLP126(F)
• Description: PHOTOCPLR AC-IN TRANS-OUT 4-SMD
• Manufacturer: Toshiba

Specifications of TLP126(F)

• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 100% @ 1mA
• Current Transfer Ratio (max): 1200% @ 1mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Configuration: 1
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 1200 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 75 C
• Minimum Operating Temperature: - 25 C
• Maximum Input Diode Current: 50 mA
• Output Device: Transistor
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 1.6mA
• Output Voltage: 80V
• Opto Case Style: Mini-Flat
• No. Of Pins: 4
• Approval Bodies: UL
• Rohs Compliant: Yes
• Number Of Elements: 1
• Forward Voltage: 1.3V
• Forward Current: 50mA
• Collector-emitter Voltage: 80V
• Package Type: MFSOP
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 75C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP126F

Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature(10 sec.)
Total package power dissipation
Total package power dissipation derating (Ta≥25°C)
Isolation voltage (AC, 1min., RH ≤ 60%)
Supply voltage
Forward current
Collector current
Operating temperature
Forward current
Forward current derating (Ta≥ 53°C) ∆
Peak forward current(100µs pulse,100pps)
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Peak collector current(10ms pulse,100pps)
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
(Note 1) Device considered a two terminal device: Pins1, and 3 shorted together and 4
Characteristic
and 6 shorted together.
Characteristic
(Ta = 25°C)
(Note 1)
Symbol
I
F(RMS)
V
T
I
CC
opr
C
∆P
∆P
∆I
Symbol
I
F(RMS)
V
V
T
BV
T
T
F
I
I
P
CEO
ECO
C
P
T
I
CP
sold
FP
T
T
opr
stg
C
/ °C
C
T
2
j
j
/ °C
/ °C
S
Min.
-25
―
―
―
-55~125
-55~100
Rating
3750
-0.7
-1.5
-2.0
125
100
150
125
260
200
Typ.
50
80
50
1.6
―
1
7
5
1
Max.
48
20
10
75
mW / °C
mW / °C
mA / °C
Vrms
Unit
mW
mW
mA
mA
mA
°C
°C
°C
°C
°C
A
V
V
Unit
mA
mA
°C
V
2002-09-25
TLP126