TLP126(F) Toshiba, TLP126(F) Datasheet - Page 2

• Manufacturer Part Number: TLP126(F)
• Description: PHOTOCPLR AC-IN TRANS-OUT 4-SMD
• Manufacturer: Toshiba

Specifications of TLP126(F)

• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 100% @ 1mA
• Current Transfer Ratio (max): 1200% @ 1mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Configuration: 1
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 1200 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 75 C
• Minimum Operating Temperature: - 25 C
• Maximum Input Diode Current: 50 mA
• Output Device: Transistor
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 1.6mA
• Output Voltage: 80V
• Opto Case Style: Mini-Flat
• No. Of Pins: 4
• Approval Bodies: UL
• Rohs Compliant: Yes
• Number Of Elements: 1
• Forward Voltage: 1.3V
• Forward Current: 50mA
• Collector-emitter Voltage: 80V
• Package Type: MFSOP
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 75C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP126F

Absolute Maximum Ratings
Recommended Operating Conditions
Storage temperature range
Operating temperature range
Lead soldering temperature(10 sec.)
Total package power dissipation
Total package power dissipation derating (Ta≥25°C)
Isolation voltage (AC, 1min., RH ≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) Device considered a two terminal device: Pins1, and 3 shorted together and 4 and 6 shorted together.
Supply voltage
Forward current
Collector current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current derating (Ta≥ 53°C) Δ
Peak forward current(100μs pulse,100pps)
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Peak collector current(10ms pulse,100pps)
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
Characteristic
(Ta = 25°C)
(Note 1)
Symbol
I
F(RMS)
V
T
I
opr
CC
C
ΔP
ΔP
ΔI
Symbol
I
F(RMS)
V
V
T
T
BV
T
F
I
I
P
CEO
ECO
C
P
T
sold
FP
I
CP
T
T
stg
opr
C
/ °C
C
T
2
j
j
/ °C
/ °C
S
Min.
−25
―
―
―
−55~125
−55~100
Rating
3750
−0.7
−1.5
−2.0
125
100
150
125
260
200
Typ.
50
80
50
1.6
―
1
7
5
1
Max.
48
20
10
75
mW / °C
mW / °C
mA / °C
Vrms
Unit
mW
mW
mA
mA
mA
°C
°C
°C
°C
°C
A
V
V
Unit
mA
mA
°C
V
2007-10-01
TLP126