TLP181(GB,F,T) Toshiba, TLP181(GB,F,T) Datasheet - Page 61

• Manufacturer Part Number: TLP181(GB,F,T)
• Description: PHOTOCOUPLER TRANS-OUT 4-SMD
• Manufacturer: Toshiba

Specifications of TLP181(GB,F,T)

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 100 % to 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Output Device: Phototransistor
• Number Of Elements: 1
• Reverse Breakdown Voltage: 5V
• Forward Voltage: 1.3V
• Collector-emitter Voltage: 80V
• Package Type: MFSOP
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP181GBF

The above operating life data are estimates extrapolated from long-term light output degradation over a single wafer lot and are
shown as reference only. Operating conditions exceeding the maximum ratings are not guaranteed.
2
2
10000000
1000000
100000
140
120
100
140
120
100
10000
GaA As (SH) LED Projected Operating Life Data
GaA As (SH) LED Projected Light Output Degradation Data
80
60
40
20
80
60
40
20
1000
0
0
100
1
1
227
2.0
I
I
I
I
I
Failure criteria light output degradation Δ P O < –50%
150
F
F
F
F
F
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
10
100
Test conditions: I
Test conditions: I
85
3.0
60
100
100
Test time (h)
Test time (h)
25
F
F
= 50 mA, Ta = 40°C
= 10 mA, Ta = 40°C
0
1000
1000
4.0
I
I
I
I
I
F
F
F
F
F
–30
Ambient Temperature (°C)
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
X-3σ
Projected F50%
operating life
Projected F0.1%
operating life
10000
10000
–50
X-3σ
1 / K (x10
X
X
–73
100000
100000
5.0
-3
)
61
10000000
1000000
100000
140
120
100
10000
80
60
40
20
1000
0
100
1
227
2.0
Failure criteria light output degradation Δ P O < –30%
I
I
I
I
I
150
F
F
F
F
F
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
100
Test conditions: I
85
3.0
60
100
Test time (h)
25
F
= 20 mA, Ta = 40°C
1000
0
4.0
I
I
I
I
I
–30
F
F
F
F
F
Ambient Temperature (°C)
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Projected F0.1%
operating life
Projected F50%
operating life
10000
X-3σ
–50
1 / K (x10
X
–73
100000
5.0
-3
)