HCPL-817-W6CE Avago Technologies US Inc., HCPL-817-W6CE Datasheet - Page 4

• Manufacturer Part Number: HCPL-817-W6CE
• Description: OPTOCOUPLER PHOTOX VDE 4-DIPW
• Manufacturer: Avago Technologies US Inc.

Specifications of HCPL-817-W6CE

• Output Type: Transistor
• Input Type: DC
• Package / Case: 4-DIP (0.400", 10.16mm)
• Number Of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 200% @ 5mA
• Current Transfer Ratio (max): 400% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 200mV
• Mounting Type: Through Hole
• Maximum Fall Time: 18 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 18 us
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 35 V
• Maximum Collector Emitter Saturation Voltage: 0.2 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 400 %
• Maximum Forward Diode Voltage: 1.4 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 30 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

HCPL-817-300E
LEAD FREE
Absolute Maximum Ratings (T
4
Solder Reflow Temperature Profile
Note: Non-halide flux should be used.
25°C
(1.6 mm below seating plane)
Total Power Dissipation
Storage Temperature, T
Operating Temperature, T
Lead Solder Temperature, max.
Average Forward Current, I
Reverse Input Voltage, V
Input Power Dissipation, P
Collector Current, I
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
Collector Power Dissipation
Isolation Voltage, V
ANODE
150°C
Dimensions in Millimeters and (Inches)
60 ~ 150 sec
A 817
Y W W
C
iso
(AC for 1 minute, R.H. = 40 ~ 60%)
200°C
S
R
A
I
F
217°C
CEO
Time (sec)
ECO
6.5 ± 0.5
A
(0.256)
= 25°C)
250°C
RANK
90 sec
DATE CODE
60 sec
260°C (Peak Temperature)
1.2 ± 0.1
30 seconds
(0.047)
60 sec
2.54 ± 0.25
4.6 ± 0.5
(0.181)
(0.1)
–55°C to +125°C
–30°C to +100°C
260°C for 10 s
50 mA
6 V
70 mW
50 mA
70 V
6 V
150 mW
200 mW
5000 Vrms
1. One-time soldering reflow is recommended within the
2. When using another soldering method such as infrared
3.5 ± 0.5
(0.138)
condition of temperature and time profile shown.
ray lamp, the temperature may rise partially in the mold
of thedevice. Keep the temperature on the package of
the device within the condition of (1) above.
0.35 ± 0.25
(0.014)
1.0 ± 0.25
(0.039)
10.16 ± 0.3
7.62 ± 0.3
(0.3)
(0.4)
(0.010)
0.26