IL212AT Vishay, IL212AT Datasheet - Page 2
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IL212AT
Manufacturer Part Number
IL212AT
Description
OPTOCOUPLER PHOTOTRANS 50% 8SOIC
Manufacturer
Vishay
Datasheet
1.IL213AT.pdf
(7 pages)
Specifications of IL212AT
Mounting Type
Surface Mount
Number Of Channels
1
Input Type
DC
Voltage - Isolation
4000Vrms
Current Transfer Ratio (min)
50% @ 10mA
Voltage - Output
30V
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor with Base
Package / Case
8-SOIC (3.9mm Width)
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
10mA
Output Voltage
30V
Opto Case Style
SOIC
No. Of Pins
8
Isolation Voltage
4kV
Configuration
1 Channel
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Current Transfer Ratio
80 %
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
240 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Current Transfer Ratio (max)
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IL212AT
Manufacturer:
Vishay Semiconductors
Quantity:
1 995
Company:
Part Number:
IL212AT
Manufacturer:
SIEMENS
Quantity:
5 510
Part Number:
IL212AT
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IL211AT, IL212AT, IL213AT
Vishay Semiconductors
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
COUPLER
Isolation test voltage
Total package dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Soldering time
ELECTRICAL CHARACTERISTCS (T
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector dark current
Collector emitter capacitance
COUPLER
Saturation voltage, collector emitter
Isolation test voltage
Capacitance (input to output)
Resistance (input to output)
Collector emitter breakdown voltage
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
SWITCHING CHARACTERISTICS
PARAMETER
Switching time
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
evaluations. Typical values are for information only and are not part of the testing requirements.
For technical questions, contact:
I
I
C
with Base Connection in SOIC-8 Package
F
TEST CONDITION
TEST CONDITION
TEST CONDITION
= 2 mA, R
= 10 mA, V
Optocoupler, Phototransistor Output,
V
V
I
I
I
I
I
F
V
C
C
E
F
V
V
CC
CE
CE
= 10 mA
= 10 mA
R
R
= 10 μA
= 10 μA
= 10 μA
amb
amb
1 s
= 6 V
= 0 V
= 10 V
= 10 V
= 0 V
L
= 25 °C, unless otherwise specified)
TEST CONDITION
CE
= 100 Ω,
LED and detector
= 25 °C, unless otherwise specified)
= 5 V
at 260 °C
IL211AT
IL212AT
IL213AT
PART
PART
PART
optocoupleranswers@vishay.com
SYMBOL
SYMBOL
SYMBOL
SYMBOL
t
BV
BV
BV
V
on
CTR
CTR
CTR
I
C
V
C
R
C
CEO
CEsat
V
T
I
V
ISO
, t
P
T
R
CEO
ECO
CE
CEO
IO
IO
F
O
amb
ISO
stg
tot
off
MIN.
4000
MIN.
MIN.
100
30
30
20
50
7
- 55 to + 150
- 55 to + 100
VALUE
4000
240
3.2
10
TYP.
TYP.
TYP.
100
130
1.3
0.1
0.5
13
10
50
80
5
3
Document Number: 83615
MAX.
MAX.
MAX.
100
1.5
0.4
Rev. 1.9, 21-Dec-10
50
50
mW/°C
UNIT
V
mW
RMS
°C
°C
s
UNIT
UNIT
UNIT
V
GΩ
μA
pF
nA
pF
pF
RMS
%
%
%
μs
V
V
V
V
V