CNY17-1X007 Vishay, CNY17-1X007 Datasheet - Page 6

• Manufacturer Part Number: CNY17-1X007
• Description: OPTOCOUPLER PHOTOTRANSISTOR
• Manufacturer: Vishay

Specifications of CNY17-1X007

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 40% @ 10mA
• Current Transfer Ratio (max): 80% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 80 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 81863
Rev. 1.3, 26-Oct-09
Collector Current and Modulation Depth CNY17-1
Collector Current and Modulation Depth CNY17-2
Collector Current and Modulation Depth CNY17-3
icny17_14
icny17_15
icny17_13
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
Fig. 13 - Saturation Voltage vs.
Fig. 14 - Saturation Voltage vs.
Fig. 15 - Saturation Voltage vs.
1
1
1
I
I
F
F
= 3 x I
= 2 x I
V
V
V
CEsat
CEsat
CEsat
I
F
C
C
= f (I
= f (I
= f (I
= 2 x I
I
I
I
C
C
C
C
C
C
)
)
)
10
10
(mA)
C
(mA)
10
(mA)
For technical questions, contact:
I
Optocoupler, Phototransistor Output,
F
I
I
= 3 x I
F
F
= I
= 3 x I
C
C
C
with Base Connection
100
100
100
[e-mail]
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
Collector Current and Modulation Depth CNY17-4
icny17_18
icny17_16
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
Fig. 16 - Saturation Voltage vs.
0
1
Vishay Semiconductors
V
CEsat
25
P
Diode
= f (I
tot
Transistor
= f (T
I
I
F
C
T
C
= I
)
(mA)
A
50
10
(°C)
C
I
A
I
F
F
)
= 3 x I
= 2 x I
C
C
75
www.vishay.com
CNY17.
100
100
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