TCET1102 Vishay, TCET1102 Datasheet - Page 4
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TCET1102
Manufacturer Part Number
TCET1102
Description
OPTOCOUPLER PHOTOTRANS 125% 4DIP
Manufacturer
Vishay
Datasheet
1.TCET1101.pdf
(9 pages)
Specifications of TCET1102
Mounting Type
Through Hole
Isolation Voltage
5000 Vrms
Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
22% @ 1mA
Current Transfer Ratio (max)
125% @ 10mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
300mV
Output Type
Transistor
Package / Case
4-DIP (0.300", 7.62mm)
Forward Current
60 mA
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Configuration
1
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
300 mV
Current Transfer Ratio
125 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TCET1102
Manufacturer:
VISHAY
Quantity:
1 400
Company:
Part Number:
TCET1102
Manufacturer:
JRC
Quantity:
1 401
Company:
Part Number:
TCET1102G
Manufacturer:
ROHM
Quantity:
7 840
Part Number:
TCET1102G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
Document Number: 83503
Rev. 2.3, 14-Oct-09
CURRENT TRANSFER RATIO
PARAMETER
I
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
C
/I
F
V
V
V
TEST CONDITION
TEST CONDITION
CE
For technical questions, contact:
CE
CE
V
V
= 5 V, I
IO
IO
= 5 V, I
= 5 V, I
(construction test only)
t
Tr
Optocoupler, Phototransistor Output,
= 500 V, T
= 500 V, T
TEST CONDITION
100 %, t
= 60 s, t
(see figure 2)
V
F
F
F
IO
= 10 mA
= 1 mA
= 5 mA
= 500 V
test
test
amb
amb
= 1 s
= 10 s,
High Temperature
= 100 °C
= 150 °C
SYMBOL
TCET1101G
TCET1102G
TCET1103G
TCET1104G
TCET1100G
TCET1105G
TCET1106G
TCET1107G
TCET1108G
TCET1109G
TCET1101G
TCET1102G
TCET1103G
TCET1104G
V
TCET1101
TCET1102
TCET1103
TCET1104
TCET1100
TCET1105
TCET1106
TCET1107
TCET1108
TCET1109
TCET1101
TCET1102
TCET1103
TCET1104
P
IOTM
T
I
diss
PART
F
si
optocoupleranswers@vishay.com
SYMBOL
V
V
V
R
R
R
IOTM
pd
pd
IO
IO
IO
MIN.
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
10
10
10
1.6
1.3
6
12
11
9
TCET1100, TCET1100G
MIN.
100
130
200
100
160
13
22
34
56
50
50
80
40
63
TYP.
Vishay Semiconductors
TYP.
TYP.
30
45
70
90
MAX.
130
265
150
6
MAX.
MAX.
600
150
300
160
260
400
125
200
320
80
www.vishay.com
UNIT
mW
UNIT
mA
kV
°C
UNIT
kV
kV
kV
Ω
Ω
Ω
%
%
%
%
%
%
%
%
%
%
%
%
%
%
813