ILD223T Vishay, ILD223T Datasheet - Page 3

• Manufacturer Part Number: ILD223T
• Description: OPTOCOUPLER PHOTODARL 500% 8SOIC
• Manufacturer: Vishay

Specifications of ILD223T

• Mounting Type: Surface Mount
• Isolation Voltage: 4000 Vrms
• Number Of Channels: 2
• Input Type: DC
• Voltage - Isolation: 4000Vrms
• Current Transfer Ratio (min): 500% @ 1mA
• Voltage - Output: 30V
• Vce Saturation (max): 1V
• Output Type: Darlington
• Package / Case: 8-SOIC (3.9mm Width)
• Forward Current: 30 mA
• Maximum Input Diode Current: 30 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Darlington
• Configuration: 2
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 1000 mV
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 2
• Optocoupler Output Type: Photodarlington
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current - Dc Forward (if): -
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1314-2; ILD223TGITR; ILD223TGITR

Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83646
Rev. 1.6, 10-Dec-08
amb
ELECTRICAL CHARACTERISTICS
PARAMETER
Thermal resistance, junction to lead
COUPLER
Capacitance (input to output)
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
(collector emitter
saturated)
Current transfer ratio
(collector emitter)
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
Current
Delay
Rise time
Storage
= 25 °C, unless otherwise specified.
I
I
F
F
TEST CONDITION
=10 mA, V
V
V
V
V
=10 mA, V
CE
CE
CE
CE
= 5 V, R
= 5 V, R
= 5 V, R
= 5 V, R
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TEST CONDITION
CE
CE
L
L
L
L
= 0.4 V
= 10 V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
V
TEST CONDITION
IO
Output (Dual, Quad Channel)
Optocoupler, Phototransistor
= 0 V, f = 1 MHz
PART
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
PP
PP
PP
PP
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
PART
SYMBOL
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
R
C
CE
CE
CE
CE
CE
CE
thjl
IO
SYMBOL
t
t
t
t
t
t
I
I
I
I
I
I
t
t
t
t
t
t
t
t
t
t
t
t
D
D
D
D
D
D
F
F
F
F
F
F
s
s
s
s
s
s
r
r
r
r
r
r
MIN.
100
100
20
20
50
50
MIN.
MIN.
Vishay Semiconductors
TYP.
170
170
100
100
200
200
130
130
TYP.
75
75
80
80
500
0.8
TYP.
0.8
0.8
1.7
1.7
1.7
1.7
1.9
1.9
2.6
2.6
2.6
2.6
0.2
0.2
0.4
0.4
0.4
0.4
20
20
10
10
5
5
MAX.
MAX.
300
300
500
500
400
400
MAX.
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UNIT
UNIT
K/W
UNIT
pF
%
%
%
%
%
%
%
%
%
%
%
%
mA
mA
mA
mA
mA
mA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
449