HCPL-181-000E Avago Technologies US Inc., HCPL-181-000E Datasheet - Page 4

OPTOCOUPLER PHOTOTRANS 4-SMD

HCPL-181-000E

Manufacturer Part Number
HCPL-181-000E
Description
OPTOCOUPLER PHOTOTRANS 4-SMD
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HCPL-181-000E

Output Type
Transistor
Input Type
DC
Package / Case
4-Miniflat
Number Of Channels
1
Voltage - Isolation
3750Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
300% @ 5mA
Voltage - Output
80V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
200mV
Mounting Type
Surface Mount
Forward Current
0.2 mA
Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Transistor
Configuration
1
Maximum Collector Emitter Voltage
80 V
Maximum Collector Emitter Saturation Voltage
200 mV
Isolation Voltage
3750 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
20mA
Output Voltage
80V
Opto Case Style
SOIC
No. Of Pins
4
Breakdown Voltage
80V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1646-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HCPL-181-000E
Manufacturer:
Avago Technologies
Quantity:
85 702
Part Number:
HCPL-181-000E
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Company:
Part Number:
HCPL-181-000E
Quantity:
461
Company:
Part Number:
HCPL-181-000E
Quantity:
30
Electrical Specifications (T
* CTR =
Figure 1. Forward current vs. temperature.
4
Absolute Maximum Ratings (T
Storage Temperature, T
Operating Temperature, T
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
Reverse Input Voltage, V
Input Power Dissipation, P
Collector Current, I
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V
(AC for 1 minute, R.H. = 40 ~ 60%)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
60
50
40
30
20
10
0
-55
I
I
C
F
x 100%
0
T
A
– AMBIENT TEMPERATURE – C
25
HCPL-181 fig 1
C
iso
50
S
R
A
75
I
F
CEO
ECO
A
= 25˚C)
100
A
= 25˚C)
125
Symbol
V
I
C
BV
BV
I
CTR
V
t
t
R
C
I
R
C
r
f
CEO
F
t
CE(sat)
iso
f
–55˚C to +155˚C
–55˚C to +100˚C
260˚C for 10 s
50 mA
6 V
70 mW
50 mA
80 V
6 V
150 mW
170 mW
3750 Vrms
Figure 2. Collector power dissipation vs. tem-
perature.
CEO
ECO
200
150
100
50
0
-55
Min.
80
6
2.5
50
5 x 10
0
T
A
– AMBIENT TEMPERATURE – C
25
10
HCPL-181 fig 2
50
Typ.
1.2
30
4
3
1 x 10
0.6
Rank Mark
A
B
C
D
75
11
100
Max.
1.4
10
250
100
30
600
0.2
18
18
1.0
125
Figure 3. Collector-emitter saturation voltage
vs. forward current.
CTR (%)
80 ~ 160
130 ~ 260
200 ~ 400
300 ~ 600
Units
V
µA
pF
nA
V
V
mA
%
V
µs
µs
pF
6
5
4
3
2
1
0
0
I
F
– FORWARD CURRENT – mA
V
Test Conditions
I
V
V = 0, f = 1 KHz
V
I
I
I
I
V
R
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
5
Conditions
I
F
C
E
F
F
F
HCPL-181 fig 3
CE
R
CE
CC
L
= 20 mA
= 10 µA, I
= 5 mA, V
= 20 mA, I
= 5 mA,
= 0.1 mA, I
= 100 Ω
= 4 V
= 5 V, T
= 20 V
= 2 V, I
I
I
I
I
I
C
C
C
C
C
= 0.5 mA
= 1 mA
= 3 mA
= 5 mA
= 7 mA
10
C
A
F
CE
C
= 2 mA
= 25˚C
T
F
= 0
A
= 1 mA
= 5 V
= 25 C
= 0
15

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