TCET4100 Vishay, TCET4100 Datasheet - Page 4

• Manufacturer Part Number: TCET4100
• Description: OPTOCP PHOTOTRANS 4CH 600% 16DIP
• Manufacturer: Vishay

Specifications of TCET4100

• Mounting Type: Through Hole
• Isolation Voltage: 5000 Vrms
• Number Of Channels: 4
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 50% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Package / Case: 16-DIP (0.300", 7.62mm)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 4
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1371-5; TCET4100

TCET2100 / TCET4100
Vishay Semiconductors
Switching Characteristics
www.vishay.com
4
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Turn-on time
Turn-off time
94 9182
95 10804
300
250
200
150
100
50
0
R
0
t
T
p
t
Figure 3. Test circuit, non-saturated operation
G
p
0
Parameter
= 0.01
= 50 s
= 50 W
I
25
F
T
si
Figure 1. Derating diagram
50 W
– Safety Temperature ( °C )
I
IR-Diode
Isi ( mA )
F
50
Phototransistor
Psi ( mW )
75
100 W
100
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 3)
V
(see figure 4)
V
(see figure 4)
S
S
S
S
S
S
S
S
+ 5 V
I
Channel II
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
C
Channel I
= 2 mA; adjusted through
125
Test condition
C
C
C
C
C
C
F
F
150
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 10 mA, R
= 10 mA, R
input amplitude
Oscilloscope
R
C
L
L
= 1 MW
= 20 pF
L
L
L
L
L
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
= 1 kΩ
= 1 kΩ
Figure 2. Test pulse diagram for sample test according to DIN EN
Symbol
13930
V
95 10843
t
t
t
t
V
V
t
on
t
off
on
off
t
t
IOWM
d
s
r
f
IOTM
IORM
V
Pd
0
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
0
R
t
T
p
t
G
p
t
= 0.01
= 50 s
= 50 Ω
1
Figure 4. Test circuit, saturated operation
I
Min
F
µ
50
I
F
t
t
t
1
3
stres
Ω
t
test
= 10 mA
, t
, t
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
10.0
Typ.
1 k
3.0
3.0
6.0
0.3
4.7
5.0
9.0
Ω
+ 5 V
I
Channel II
Channel I
C
Document Number 83727
t
Max
2
t
3
Rev. 1.4, 26-Oct-04
t
t
stres
test
t
t
4
Oscilloscope
R
C
L
L
≥
≤
1
20 pF
M
Unit
µs
µs
µs
µs
µs
µs
µs
µs
Ω