TLP504A(F) Toshiba, TLP504A(F) Datasheet - Page 61
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TLP504A(F)
Manufacturer Part Number
TLP504A(F)
Description
PHOTOCOUPLER DUAL TRANS-OUT 8DIP
Manufacturer
Toshiba
Specifications of TLP504A(F)
Number Of Channels
2
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
55V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Output Device
Transistor
Number Of Elements
1
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
60mA
Collector-emitter Voltage
55V
Package Type
PDIP
Collector Current (dc) (max)
50mA
Isolation Voltage
2500Vrms
Power Dissipation
250mW
Current Transfer Ratio
600%
Pin Count
8
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP504AF
The above operating life data are estimates extrapolated from long-term light output degradation over a single wafer lot and are
shown as reference only. Operating conditions exceeding the maximum ratings are not guaranteed.
2
2
10000000
1000000
100000
140
120
100
140
120
100
10000
GaA As (SH) LED Projected Operating Life Data
GaA As (SH) LED Projected Light Output Degradation Data
80
60
40
20
80
60
40
20
1000
0
0
100
1
1
227
2.0
I
I
I
I
I
Failure criteria light output degradation Δ P O < –50%
150
F
F
F
F
F
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
10
100
Test conditions: I
Test conditions: I
85
3.0
60
100
100
Test time (h)
Test time (h)
25
F
F
= 50 mA, Ta = 40°C
= 10 mA, Ta = 40°C
0
1000
1000
4.0
I
I
I
I
I
F
F
F
F
F
–30
Ambient Temperature (°C)
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
X-3σ
Projected F50%
operating life
Projected F0.1%
operating life
10000
10000
–50
X-3σ
1 / K (x10
X
X
–73
100000
100000
5.0
-3
)
61
10000000
1000000
100000
140
120
100
10000
80
60
40
20
1000
0
100
1
227
2.0
Failure criteria light output degradation Δ P O < –30%
I
I
I
I
I
150
F
F
F
F
F
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
100
Test conditions: I
85
3.0
60
100
Test time (h)
25
F
= 20 mA, Ta = 40°C
1000
0
4.0
I
I
I
I
I
–30
F
F
F
F
F
Ambient Temperature (°C)
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Projected F0.1%
operating life
Projected F50%
operating life
10000
X-3σ
–50
1 / K (x10
X
–73
100000
5.0
-3
)