ILQ620GB Vishay, ILQ620GB Datasheet - Page 4

• Manufacturer Part Number: ILQ620GB
• Description: OPTOCPLR PHOTOTRA 4CH 100% 16DIP
• Manufacturer: Vishay

Specifications of ILQ620GB

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 4
• Input Type: AC, DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): ±60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 16-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Output Device: Transistor
• Configuration: 4
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1332-5; ILQ620GBGI; ILQ620GBGI

ILD620, ILD620GB, ILQ620, ILQ620GB
Vishay Semiconductors
www.vishay.com
4
SWITCHING CHARACTERISTICS
PARAMETER
NON-SATURATED
On time
Rise time
Off time
Fall time
Propagation H - L
Propagation L - H
SATURATED
On time
Rise time
Off time
Fall time
Propagation H - L
Propagation L - H
22441
450
400
350
300
250
200
150
100
50
0
0
T
25
Fig. 1 - Derating Diagram
si
IR-diode
I
si
- Safety Temperature (°C)
(mA)
50
Phototransistor
75
P
si
(mW)
100 125 150 175
For technical questions, contact:
Optocoupler, Phototransistor Output,
I
I
I
I
I
I
I
I
I
I
I
I
R
R
R
R
R
R
F
F
F
F
F
F
F
R
F
R
F
R
F
R
F
R
F
R
AC Input (Dual, Quad Channel)
L
L
L
L
L
L
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
= ± 10 mA, V
L
= ± 10 mA, V
L
= ± 10 mA, V
L
= ± 10 mA, V
L
= ± 10 mA, V
L
= ± 10 mA, V
L
TEST CONDITION
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 75 Ω, 50 % of V
= 1 kΩ, V
= 1 kΩ, V
= 1 kΩ, V
= 1 kΩ, V
= 1 kΩ, V
= 1 kΩ, V
TH
TH
TH
TH
TH
TH
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= 1.5 V,
= 1.5 V,
= 1.5 V,
= 1.5 V,
= 1.5 V,
= 1.5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
= 5 V,
PP
PP
PP
PP
PP
PP
[e-mail]
SYMBOL
Fig. 2 - Test Pulse Diagram for Sample Test According to
t
t
t
t
13930
t
t
PHL
PLH
t
t
PHL
PLH
V
on
t
off
t
on
t
off
t
V
V
r
r
f
f
IOWM
IOTM
IORM
V
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
Pd
0
t
1
MIN.
t
t
t
1
3
stres
t
, t
, t
test
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
2.3
1.1
2.5
4.3
2.8
2.5
2.6
7.2
20
11
3
2
Document Number: 83653
MAX.
Rev. 1.5, 10-Dec-10
t
2
t
3
t
t
test
stres
t
t
4
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs