ILQ620 Vishay, ILQ620 Datasheet - Page 3

• Manufacturer Part Number: ILQ620
• Description: OPTOCPLR PHOTOTRAN 4CH 50% 16DIP
• Manufacturer: Vishay

Specifications of ILQ620

• Isolation Voltage: 5300 Vrms
• Number Of Channels: 4
• Input Type: AC, DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 50% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): ±60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Output Device: Transistor
• Configuration: 4
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Input Current Max: 10mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1331-5; ILQ620GI; ILQ620GI

Electrical Characteristics
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Current Transfer Ratio
Document Number 83653
Rev. 1.4, 26-Oct-04
Forward voltage
Forward current
Capacitance
Thermal resistance, junction to
lead
Collector-emitter capacitance
Collector-emitter leakage
current
Thermal resistance, junction to
lead
Off-state collector current
Collector-emitter saturation
voltage
Channel/Channel CTR match
CTR symmetry
Current Transfer Ratio
(collector-emitter saturated)
Current Transfer Ratio
(collector-emitter)
Current Transfer Ratio
(collector-emitter saturated)
Current Transfer Ratio
(collector-emitter)
amb
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
I
V
V
V
V
T
V
I
I
I
I
I
I
I
I
I
F
F
F
F
CE
CE
F
F
F
F
R
F
CE
CE
A
F
= ± 10 mA
= ± 8.0 mA, I
= ± 1.0 mA, I
= ± 5.0 mA, V
= ± 1.0 mA, V
= ± 5.0 mA, V
= ± 1.0 mA, V
= ± 5.0 mA, V
(I
(I
= 0 V, f = 1.0 MHz
= 85 °C, V
= ± 0.7 V, V
= ± 0.7 V
F
F
= 5.0 V, f = 1.0 MHz
= 24 V
= - 5.0 mA)/
= + 5.0 mA)
Test condition
Test condition
Test condition
Test condition
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 24 V
ILD620/ 620GB / ILQ620/ 620GB
= 24 V
= 2.4 mA
= 0.2 mA
= 5.0 V
= 0.4 V
= 5.0 V
= 0.4 V
= 5.0 V
ILD620GB
ILQ620GB
ILD620GB
ILQ620GB
ILQ620GB
ILD620GB
Symbol
Symbol
ILD620
ILQ620
ILD620
ILQ620
R
R
ILQ620
ILD620
I
I
C
C
CEO
CEO
Part
V
THJL
THJL
Part
I
CE
F
O
F
CTRX/CTRY
I
Symbol
I
CTR
CTR
CTR
CTR
CE(OFF)
V
V
V
V
CE(RATIO)
Symbol
CTR
CTR
CTR
CTR
Min
Min
1.0
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
CE
CE
CE
CE
Min
Vishay Semiconductors
1 to 1
1.15
Typ.
750
Typ.
500
100
100
Min
2.5
6.8
2.0
0.5
25
10
50
50
30
30
Typ.
1.0
Typ.
200
200
60
60
80
80
Max
Max
100
1.3
20
50
Max
3 to 1
0.4
0.4
0.4
0.4
10
Max
www.vishay.com
600
600
600
600
2.0
K/W
K/W
Unit
Unit
µA
pF
pF
nA
µA
V
Unit
Unit
µA
V
V
V
V
%
%
%
%
%
%
%
%
3