ILQ2 Vishay, ILQ2 Datasheet - Page 2

• Manufacturer Part Number: ILQ2
• Description: OPTOCOUPLER PHOTO QD 100% 16DIP
• Manufacturer: Vishay

Specifications of ILQ2

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 4
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Current Transfer Ratio (max): 500% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 16-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 4
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 500 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 400 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1330-5; ILQ2GI; ILQ2GI

ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
448
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter reverse voltage
Collector current
Power dissipation
Derate lineary from 25 °C
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation resistance
Package power dissipation
Derate linearly from 25 °C
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Saturation voltage, collector emitter
DC forward current gain
DC forward current gain saturated
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
Output (Dual, Quad Channel)
Optocoupler, Phototransistor
V
V
V
I
V
CE
C
V
CE
CE
V
TEST CONDITION
IO
2 mm from case bottom
(1)
R
= 1 mA, I
IO
= 0.4 V, I
= 5.0 V, f = 1 MHz
= 10 V, I
= 0 V, f = 1 MHz
TEST CONDITION
= 500 V, T
V
= 500 V, T
I
F
VCE
V
= 60 mA
R
t < 1.0 ms
= 6 V
= 10 V
B
B
B
= 20 µA
= 20 µA
= 20 µA
amb
amb
= 100 °C
= 25 °C
SYMBOL
V
h
T
I
C
CESAT
h
C
CEO
FEsat
V
I
thJL
FE
R
CE
F
O
PART
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
MIN.
200
120
SYMBOL
V
V
V
V
V
V
T
P
P
V
I
R
R
P
T
T
V
FSM
CER
CER
CER
CER
CER
CER
I
I
I
amb
T
diss
diss
ISO
stg
sld
F
C
C
tot
IO
IO
R
j
TYP.
1.25
0.01
0.25
750
650
400
6.8
25
5
- 40 to + 150
- 40 to + 100
VALUE
5300
Document Number: 83646
100
400
200
10
10
250
100
260
2.5
1.3
2.6
≥ 7
≥ 7
3.3
50
50
70
70
70
70
50
60
6
12
11
MAX.
1800
1.65
600
0.4
10
50
Rev. 1.6, 10-Dec-08
mW/°C
mW/°C
mW/°C
UNIT
V
mW
mW
mW
mm
mm
mA
mA
mA
UNIT
°C
°C
°C
°C
RMS
K/W
Ω
Ω
V
A
V
V
V
V
V
V
µA
pF
pF
nA
V
V