ILD2 Vishay, ILD2 Datasheet - Page 3
![OPTOCOUPLER PHOTO DUAL 100% 8DIP](/photos/7/43/74320/8dip_pkg_sml.jpg)
ILD2
Manufacturer Part Number
ILD2
Description
OPTOCOUPLER PHOTO DUAL 100% 8DIP
Manufacturer
Vishay
Specifications of ILD2
Mounting Type
Through Hole
Isolation Voltage
5300 Vrms
Number Of Channels
2
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
100% @ 10mA
Current Transfer Ratio (max)
500% @ 10mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor
Package / Case
8-DIP (0.300", 7.62mm)
Forward Current
60 mA
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor
Configuration
2
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
400 mV
Current Transfer Ratio
500 %
Maximum Forward Diode Voltage
1.65 V
Maximum Collector Current
400 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
No. Of Channels
2
Optocoupler Output Type
Phototransistor
Input Current
60mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1307-5
ILD2GI
ILD2GI
ILD2GI
ILD2GI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ILD2
Manufacturer:
AGILENT
Quantity:
31 300
Part Number:
ILD2
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
ILD2-1091
Manufacturer:
AMI
Quantity:
6 219
Part Number:
ILD2-214
Manufacturer:
SIEMENS/西门子
Quantity:
20 000
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
Document Number: 83646
Rev. 1.7, 04-Nov-10
ELECTRICAL CHARACTERISTICS (T
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
Saturation voltage, collector emitter
DC forward current gain
DC forward current gain saturated
Thermal resistance, junction to lead
COUPLER
Capacitance (input to output)
CURRENT TRANSFER RATIO
PARAMETER
I
(collector emitter
saturated)
C
evaluation. Typical values are for information only and are not part of the testing requirements.
/I
F
I
I
F
F
TEST CONDITION
=10 mA, V
=10 mA, V
For technical questions, contact:
CE
CE
Optocoupler, Phototransistor Output
= 0.4 V
= 10 V
V
V
I
V
C
CE
V
TEST CONDITION
V
CE
CE
IO
R
= 1 mA, I
= 0.4 V, I
amb
= 10 V, I
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
V
I
(Dual, Quad Channel)
F
VCE
V
= 60 mA
R
= 25 °C, unless otherwise specified)
= 6 V
= 10 V
PART
B
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
ILD1
ILQ1
ILD2
ILQ2
ILD5
ILQ5
B
B
= 20 μA
= 20 μA
= 20 μA
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
optocoupleranswers@vishay.com
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
SYMBOL
V
h
T
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
I
CESAT
C
R
C
CEO
h
FEsat
C
V
thJL
CE
CE
CE
CE
CE
CE
I
CE
FE
thjl
R
IO
F
O
MIN.
100
100
20
20
50
50
MIN.
200
120
Vishay Semiconductors
TYP.
170
170
100
100
200
200
130
130
TYP.
75
75
80
80
1.25
0.01
0.25
750
650
400
500
6.8
0.8
25
5
MAX.
MAX.
300
300
500
500
400
400
1800
1.65
600
0.4
10
50
www.vishay.com
UNIT
UNIT
K/W
K/W
μA
nA
%
%
%
%
%
%
%
%
%
%
%
%
pF
pF
pF
V
V
3