H11A3 Vishay, H11A3 Datasheet - Page 2

• Manufacturer Part Number: H11A3
• Description: OPTOCOUPLER PHOTOTRANS 20% 6DIP
• Manufacturer: Vishay

Specifications of H11A3

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1275-5; H11A3GI; H11A3GI

H11A1/H11A2/H11A3/H11A4/H11A5
Vishay Semiconductors
Note
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
www.vishay.com
272
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
Creepage distance
Clearance distance
Insulation thickness between emitter
and detector
Comparative tracking index
Isolation resistance
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
Emitter collector capacitance
= 25 °C, unless otherwise specified.
For technical questions, contact: [e-mail]
I
max. 10 s, dip soldering: distance to seat-
V
E
I
I
V
C
TEST CONDITION
C
CE
= 100 µA, I
R
= 10 µA, I
per DIN IEC 112/VDE 0303, part 1
= 1 mA, I
Optocoupler, Phototransistor Output,
= 0 V, f = 1 MHz
= 10 V, I
I
V
F
V
V
V
CE
= 10 mA
R
IO
IO
= 3 V
= 0 V
= 500 V, T
TEST CONDITION
ing plane ≥ 1.5 mm
= 500 V, T
F
F
F
F
= 0 mA
= 0 mA
= 0 mA
with Base Connection
= 0 mA
t ≤ 10 µs
t < 1 ms
amb
amb
= 100 °C
= 25 °C
H11A1
H11A2
H11A3
H11A4
H11A5
PART
SYMBOL
BV
BV
BV
I
C
CEO
C
V
V
V
V
V
I
CE
R
CEO
ECO
CBO
O
F
F
F
F
F
SYMBOL
V
V
P
P
V
T
I
T
T
R
R
FSM
V
CEO
EBO
I
I
amb
T
I
diss
diss
ISO
stg
sld
C
C
F
IO
IO
R
j
MIN.
30
70
7
- 55 to + 150
- 55 to + 100
TYP.
VALUE
1.1
1.1
1.1
1.1
1.1
50
≥ 10
≥ 10
5
6
5300
≥ 0.4
100
100
150
175
100
260
2.5
≥ 7
≥ 7
60
70
50
6
7
12
11
Document Number: 83730
MAX.
1.5
1.5
1.5
1.5
1.7
Rev. 1.5, 08-May-08
10
50
UNIT
V
mW
mW
mm
mm
mm
mA
mA
mA
°C
°C
°C
°C
RMS
Ω
Ω
V
A
V
V
UNIT
µA
nA
pF
pF
V
V
V
V
V
V
V
V