SFH615A-2 Vishay, SFH615A-2 Datasheet - Page 2

• Manufacturer Part Number: SFH615A-2
• Description: OPTOCOUPLER PHOTOTRANS 125% 4DIP
• Manufacturer: Vishay

Specifications of SFH615A-2

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 22% @ 1mA
• Current Transfer Ratio (max): 125% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 4-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 125 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 4
• Approval Bodies: IEC65, IEC950, BS6301, BS
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1349-5; SFH615A-2GI; SFH615A-2GI

SFH615A, SFH6156
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
632
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Insulation thickness between emitter and detector
Comparative tracking index per
DIN IEC112/VDE 0303 part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
18483
200
150
100
50
0
0
T
amb
Diode
25
(2)
- Ambient Temperature (°C)
50
Phototransistor
75
For technical questions, contact:
100
Optocoupler, Phototransistor Output,
125
High Reliability, 5300 V
(1)
150
max. 10 s, dip soldering distance to
V
V
IO
seating plane ≥ 1.5 mm
IO
= 500 V, T
TEST CONDITION
= 500 V, T
[e-mail]
t
t
p
p
t = 1 s
≤ 10 µs
≤ 1 ms
amb
amb
= 100 °C
= 25 °C
RMS
SYMBOL
V
T
V
I
V
CTI
R
R
T
T
V
FSM
ECO
I
I
I
amb
ISO
CE
stg
sld
F
C
C
IO
IO
R
- 55 to + 150
- 55 to +100
VALUE
≥ 10
≥ 10
Document Number: 83671
≥ 175
5300
≥ 0.4
100
260
2.5
≥ 7
≥ 7
60
70
50
6
7
12
11
Rev. 2.2, 05-Oct-09
UNIT
V
mm
mm
mm
mA
mA
mA
°C
°C
°C
RMS
Ω
Ω
V
A
V
V