IL213AT Vishay, IL213AT Datasheet - Page 3

• Manufacturer Part Number: IL213AT
• Description: OPTOCOUPLER PHOTOTRNS 100% 8SOIC
• Manufacturer: Vishay

Specifications of IL213AT

• Mounting Type: Surface Mount
• Isolation Voltage: 4000 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 4000Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Voltage - Output: 30V
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 8-SOIC (3.9mm Width)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Current Transfer Ratio: 130 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 240 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Approval Bodies: UL1577, DIN EN
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1287-2; IL213ATGITR; IL213ATGITR

Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “Safe Electrical Insulation” only within the safety ratings. Compliance with
TYPICAL CHARACTERISTICS (T
Document Number: 83615
Rev. 1.9, 21-Dec-10
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
V
V
P
I
T
Creepage distance
Clearance distance
Insulation thickness
SI
the safety ratings shall be ensured by means of protective circuits.
SI
IOTM
IORM
SO
Fig. 2 - Collector Current vs. Collector Emitter Voltage (NS)
22462
22463
Fig. 1 - Forward Voltage vs. Forward Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
45
40
35
30
25
20
15
10
5
0
0.1
0
V
T
CE
amb
- Collector Emitter Voltage (N ) (V)
1
= - 55 °C
T
amb
I
F
= 100 °C
- Forward Current (mA)
2
T
amb
1
= - 40 °C
3
T
I
amb
F
= 30 mA
I
= 75 °C
F
4
T
= 20 mA
with Base Connection in SOIC-8 Package
amb
For technical questions, contact:
T
amb
I
F
Optocoupler, Phototransistor Output,
= 50 °C
5
= 15 mA
10
= 0 °C
T
TEST CONDITION
amb
I
6
amb
F
= 10 mA
= 25 °C
I
F
= 5 mA
7
= 25 °C, unless otherwise specified)
100
8
SYMBOL
[e-mail]
CTI
Fig. 4 - Collector Current vs. Collector Emitter Voltage (sat)
Fig. 3 - Leakage Current vs. Ambient Temperature
22466
IL211AT, IL212AT, IL213AT
22464
10 000
0.001
MIN.
6000
1000
175
560
0.2
0.01
100
4
4
0.1
30
25
20
15
10
10
5
0
1
- 60 - 40 - 20
0
V
CE
T
I
F
amb
- Collector Emitter Voltage ( at) (V)
= 0 mA
55/100/21
- Ambient Temperature (°C)
Vishay Semiconductors
0.1
TYP.
V
CE
0
= 40 V
I
0.2
20
F
= 1 mA
I
V
F
40
CE
= 25 mA
MAX.
I
399
350
150
165
F
= 12 V
= 10 mA
V
I
0.3
F
60
CE
= 5 mA
I
F
= 24 V
= 2 mA
80 100
www.vishay.com
0.4
UNIT
mW
mm
mm
mm
mA
°C
V
V
3