TLP2200(TP1) Toshiba, TLP2200(TP1) Datasheet

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... High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Direct Replacement For HCPL−2200 The TOSHIBA TLP2200 consists of a GaAℓAs light emitting diode and integrated high gain, high speed photodetector. This unit is 8−lead DIP package. The detector has a three state output stage that eliminates the need for pull− ...

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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

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Electrical Characteristics Characteristic Output leakage current (V > Logic low output voltage Logic high output voltage Logic low enable current Logic high enable current Logic low enable voltage Logic high enable voltage Logic low supply current ...

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Switching Characteristics (unless otherwise specified 0~85°C,V Characteristic Propagation delay time to logic high output level (Note 5) Propagation delay time to logic low output level (Note 5) Output rise time (10−90%) Output fall time (90−10%) Output enable time ...

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Test Circuit pHL , Input 90% Output 2.15kΩ (ON) 1.6mA F Test Circuit pHZ pZH , Input V E Output V ...

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Test Circuit 3 Common Mode Transient Immunity 90 10 Switch 1.6mA F Output (MAX.) (*) Switch 0mA F (*) See ...

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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...