R82EC2100DQ50J Kemet, R82EC2100DQ50J Datasheet - Page 3

CAP FLM .01UF 100V POLY MKT RAD

R82EC2100DQ50J

Manufacturer Part Number
R82EC2100DQ50J
Description
CAP FLM .01UF 100V POLY MKT RAD
Manufacturer
Kemet
Series
MKT Arcotronicsr
Datasheets

Specifications of R82EC2100DQ50J

Capacitance
10000pF
Voltage - Dc
100V
Dielectric Material
Polyester, Metallized
Tolerance
±5%
Operating Temperature
-55°C ~ 105°C
Mounting Type
Through Hole
Package / Case
Radial
Size / Dimension
0.283" L x 0.098" W (7.20mm x 2.50mm)
Height
0.256" (6.50mm)
Termination
PC Pins
Lead Spacing
0.197" (5.00mm)
Features
General Purpose
Voltage Rating
100 Volts
Termination Style
Radial
Dimensions
2.5 mm W x 7.2 mm L x 6.5 mm H
Operating Temperature Range
- 55 C to + 105 C
Dissipation Factor Df
250
Load Life
2000 Hrs
Product
Metallized Polyester Film Capacitors
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Esr (equivalent Series Resistance)
-
Voltage - Ac
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
399-5450-3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R82EC2100DQ50J
Manufacturer:
KEMET
Quantity:
30 000
Part Number:
R82EC2100DQ50JB
Manufacturer:
KEMET/基美
Quantity:
20 000
eleCtriCal CharaCteriStiCS
rated voltage (V


rated temperature (t
temperature derated voltage:
for temperatures between +85°C and +105°C a decreasing
factorof1.25%perdegree°ContheratedvoltageV
anda.c.)hastobeapplied.
Capacitance range:
Capacitance values:
Capacitance tolerances (measured at 1 khz):
±5% (J); ±10% (K); ±20% (M).
total self-inductance (l): ≈7nH
max1nHper1mmleadandcapacitorlength.
Dissipation factor (Df):
tgδ 10
insulation resistance:


test voltage between terminations:
1.4xV
05/2007

 10
 100
kHz
test conditions
Temperature:
Voltage charge time:
Voltage charge:
Performance
for V
≥ 15000 MΩ for C ≤ 0.33µF
≥ 5000 s
≥ 1000 s
for V
≥ 30000 MΩ
*Typicalvalue


1
R
-4
applied for 2 s at +25°C±5°C.
at +25°C ±5°C

C
r
r
≤100 Vdc
>100Vdc
 80
120
250
0.1µF


for C > 0.33µF and ≤1µF
for C > 1µF
r
):
C>0.1µF
r
 80
120
):
100Vdc forV
50Vdc forV
250Vdc 400Vdc
+85 °C
1000pFto4.7µF
E6series(IEC60063Norm).
+25°C±5°C
1 min
50Vdc
63Vdc 100Vdc
R
R
<100Vdc
≥100 Vdc
R
(d.c.
0
metalliZeD PolyeSter film CaPaCitor
D.C. mUltiPUrPoSe aPPliCationS
p = 5 mm
PRODUCT CODE: r82
teSt methoD anD PerformanCe
Damp heat, steady state:
endurance:
resistance to soldering heat:
long term stability (after two years):
reliaBility:
ReferenceMILHDB217
test conditions
Temperature:
Relative humidity (RH):
Test duration:
Performance
Capacitance change |∆C/C|: ≤ 5%
DF change (∆tgδ):
Insulation resistance:
test conditions
Temperature:
Test duration:
Voltage applied:
Performance
Capacitance change |∆C/C|: ≤ 5%
DF change (∆tgδ): ≤ 30x10
Insulation resistance:
test conditions
Solder bath temperature:
Dipping time (with heat screen):10 s ±1 s
Performance
Capacitance change |∆C/C|: ≤2%
DF change (∆tgδ):
Insulation resistance:
Storage: standardenvironmentalconditions(seepage12).
Performance
Capacitance change |∆C/C|: ≤ 3% for C≤ 0.1µF
application conditions:
Temperature:
Voltage:
Failure rate:
(1FIT=1x10
failure criteria:
(accordingtoDIN44122)
Shortoropencircuit
Capacitance change |∆C/C|: > 10%
DF change (∆tgδ):
Insulation resistance:
-9
failures/componentsxh)
≤ 20x10
≤ 30x10
≤ 20x10
-4
-4
≤ 2% for C> 0.1µF
+40°C±2°C
93% ±2%
56 days
≤ 50x10
≥ 50% of initial limit.
+105°C ±2°C
2000 h
1.25xV
at
≥50% of initial limit.
+260°C±5°C
≥ initial limit.
+40°C±2°C
0.5xV
≤ 1 FIT
> 2 x initial limit.
< 0.005 x initial limit.
-4
-4
at 10kHz for C≤1µF

at 10kHz for C≤ 1µF
at
1kHz
R
1kHz forC>1µF
C
-4
at1kHz
forC>1µF
MKTSeries
r82

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