NCP1575D ON Semiconductor, NCP1575D Datasheet - Page 4

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NCP1575D

Manufacturer Part Number
NCP1575D
Description
IC CTLR SYNCH BUCK LV 8-SOIC
Manufacturer
ON Semiconductor
Type
Step-Down (Buck)r
Datasheet

Specifications of NCP1575D

Internal Switch(s)
No
Synchronous Rectifier
Yes
Number Of Outputs
1
Voltage - Output
Adj to 0.98V
Frequency - Switching
200kHz, programmable
Voltage - Input
9 ~ 20 V
Operating Temperature
0°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Output
-
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 60 second maximum above 183 C.
2. Characteristics at temperature extremes are guaranteed via correlation using quality statistical control methods.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
C
MAXIMUM RATINGS
Error Amplifier
COMP
Operating Junction Temperature
Storage Temperature Range
ESD Susceptibility (Human Body Model)
ESD Susceptibility (Charged Device Model)
Lead Temperature Soldering:
Moisture Sensitivity Level
Package Thermal Resistance, SOIC−8:
V
COMP Source Current
COMP Sink Current
Reference Voltage
COMP Max Voltage
COMP Min Voltage
COMP Fault Discharge Current at UVLO
COMP Fault Discharge Threshold to
Open Loop Gain
Unity Gain Bandwidth
PSRR @ 1.0 kHz
Output Transconductance
Output Impedance
Compensation Capacitor
Voltage Feedback Input
FB
High−Side FET Driver
Reset UVLO
Low−Side FET Driver
Frequency Adjust
Bias Current
IC Power Input
= 0.1 mF, R
Pin Name
Ground
Characteristic
OSC
= 74 kW; unless otherwise specified.) Note 2
GATE(H)
GATE(L)
Symbol
COMP
R
GND
V
V
OSC
CC
FB
(0 C < T
Junction−to−Case, R
Junction−to−Ambient, R
V
V
COMP = 1.5 V, V
COMP = 1.5 V, V
COMP = V
T
V
V
COMP = 1.2 V, V
6.0 V
6.0 V
6.0 V
0.5 V
20 V
20 V
20 V
J
MAX
FB
FB
FB
< 25 C
Rating
J
= 0 V
= 0.8 V
= 1.2 V
< 125 C, 9.0 V < V
http://onsemi.com
FB
−0.5 V, −2.0 V for 50 ns
−0.5 V, −2.0 V for 50 ns
NCP1575
Test Conditions
FB
FB
CC
qJC
−0.5 V
−0.5 V
−0.5 V
−0.5 V
−0.5 V
= 0.8 V
= 1.2 V
= 6.9 V
qJA
V
4
MIN
CC
< 20 V, C
GATE(H)
1.5 A Peak, 200 mA DC
1.5 A Peak, 200 mA DC
1.5 A Peak, 450 mA DC
Reflow: (Note 1)
= C
I
SOURCE
1.0 mA
1.0 mA
10 mA
N/A
GATE(L)
0.970
0.965
Min
2.4
0.5
0.1
15
15
= 3.3 nF,
0.980
0.980
0.25
Typ
0.4
3.1
0.1
1.2
2.5
30
30
98
20
70
32
−65 to 150
1.5 A Peak, 450 mA DC
1.5 A Peak, 200 mA DC
1.5 A Peak, 200 mA DC
230 peak
Value
150
200
165
2.0
48
2
0.990
0.995
Max
1.0 mA
1.0 mA
10 mA
2.0
0.2
0.3
60
60
I
SINK
N/A
mmho
Unit
Unit
kHz
MW
C/W
C/W
mA
kV
mA
mA
mA
dB
dB
V
V
V
V
V
V
C
C
C

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