LM2830XQMF/NOPB National Semiconductor, LM2830XQMF/NOPB Datasheet - Page 13

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LM2830XQMF/NOPB

Manufacturer Part Number
LM2830XQMF/NOPB
Description
IC REG BUCK 1A 1.6MHZ SOT23-5
Manufacturer
National Semiconductor
Type
Step-Down (Buck)r
Datasheet

Specifications of LM2830XQMF/NOPB

Internal Switch(s)
Yes
Synchronous Rectifier
No
Number Of Outputs
1
Voltage - Output
0.6 ~ 4.5 V
Current - Output
1A
Frequency - Switching
1.6MHz
Voltage - Input
3 ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
SOT-23-5, SC-74A, SOT-25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Other names
LM2830XQMF
Calculating Efficiency, and Junction
Temperature
The complete LM2830 DC/DC converter efficiency can be
calculated in the following manner.
Or
Calculations for determining the most significant power loss-
es are shown below. Other losses totaling less than 2% are
not discussed.
Power loss (P
the converter: switching and conduction. Conduction losses
usually dominate at higher output loads, whereas switching
losses remain relatively fixed and dominate at lower output
loads. The first step in determining the losses is to calculate
the duty cycle (D):
V
on, and is equal to:
V
diode. It can be obtained from the diode manufactures Elec-
trical Characteristics section. If the voltage drop across the
inductor (V
The conduction losses in the free-wheeling Schottky diode
are calculated as follows:
Often this is the single most significant power loss in the cir-
cuit. Care should be taken to choose a Schottky diode that
has a low forward voltage drop.
Another significant external power loss is the conduction loss
in the output inductor. The equation can be simplified to:
The LM2830 conduction loss is mainly associated with the
internal PFET:
SW
D
is the forward voltage drop across the Schottky catch
is the voltage drop across the internal PFET when it is
DCR
LOSS
) is accounted for, the equation becomes:
P
) is the sum of two basic types of losses in
DIODE
V
P
SW
IND
= V
= I
= I
OUT
D
OUT
x I
2
x R
OUT
x R
DSON
x (1-D)
DCR
13
If the inductor ripple current is fairly small, the conduction
losses can be simplified to:
Switching losses are also associated with the internal PFET.
They occur during the switch on and off transition periods,
where voltages and currents overlap resulting in power loss.
The simplest means to determine this loss is to empirically
measuring the rise and fall times (10% to 90%) of the switch
at the switch node.
Switching Power Loss is calculated as follows:
Another loss is the power required for operation of the internal
circuitry:
I
3.3mA for the 1.6MHz frequency option.
Typical Application power losses are:
Thermal Definitions
T
T
R
R
Heat in the LM2830 due to internal power dissipation is re-
moved through conduction and/or convection.
Conduction: Heat transfer occurs through cross sectional ar-
eas of material. Depending on the material, the transfer of
heat can be considered to have poor to good thermal con-
ductivity properties (insulator vs. conductor).
Heat Transfer goes as:
Silicon
Convection: Heat transfer is by means of airflow. This could
be from a fan or natural convection. Natural convection occurs
when air currents rise from the hot device to cooler air.
Thermal impedance is defined as:
Q
J
A
θJC
θJA
is the quiescent operating current, and is typically around
= Chip junction temperature
= Ambient temperature
= Thermal resistance from chip junction to ambient air
= Thermal resistance from chip junction to device case
R
IND
ΣP
T
T
V
I
DS(ON)
F
ΣP
V
package
OUT
V
FALL
RISE
OUT
I
D
SW
η
COND
Q
IN
D
DCR
P
P
COND
SWR
SWF
+ P
P
Power Loss Tabulation
= 1/2(V
= 1/2(V
+ P
COND
SW
P
P
1.6MHz
150mΩ
3.3mA
SWF
70mΩ
INTERNAL
lead frame
SW
0.45V
0.667
5.0V
3.3V
1.0A
88%
4nS
4nS
+ P
= I
P
= P
IN
Q
IN
+ P
OUT
DIODE
= I
x I
x I
SWR
SWR
2
Q
OUT
OUT
= 125mW
x R
x V
+ P
P
+ P
+ P
x F
x F
P
P
INTERNAL
P
DSON
IN
P
P
P
P
PCB
DIODE
IND
COND
P
LOSS
SWR
SWF
OUT
SWF
IND
SW
Q
SW
Q
= P
+ P
x D
x T
x T
Q
INTERNAL
FALL
RISE
= P
150mW
100mW
345mW
125mW
17mW
70mW
)
)
3.3W
6mW
6mW
LOSS
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