NCP5378MNR2G ON Semiconductor, NCP5378MNR2G Datasheet - Page 5

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NCP5378MNR2G

Manufacturer Part Number
NCP5378MNR2G
Description
IC CTLR 1PH SYNC BUCK 32QFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP5378MNR2G

Applications
Controller, Power Supplies for Next-Generation Intel Processors
Voltage - Input
4.3 ~ 7 V
Number Of Outputs
1
Voltage - Output
0.5 ~ 1.6 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
32-TFQFN Exposed Pad
Output Voltage
0.075 V to 3 V
Output Current
2 mA
Input Voltage
- 0.3 V to + 3 V
Operating Temperature Range
0 C to + 70 C
Mounting Style
SMD/SMT
Isolated/non-isolated
Non Isolated
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
0°C < T
3. Guaranteed by design.
4. For propagation delays, “tpdh” refers to the specified signal going high “tpdl” refers to it going low. Reference Gate Timing Diagram.
ERROR AMPLIFIER
DIFFERENTIAL SUMMING AMPLIFIER
INTERNAL OFFSET VOLTAGE
VDROOP AMPLIFIER
Input Bias Current
Open Loop DC Gain
Open Loop Unity Gain Bandwidth
Open Loop Phase Margin
Slew Rate
Maximum Output Voltage
Minimum Output Voltage
Output Source Current
Output Sink Current
V+ Input Pull down Resistance
V+ Input Bias Voltage
Input Voltage Range (Note 3)
−3 dB Bandwidth
Closed Loop DC gain VS to Diffout (Note 3)
Maximum Output Voltage
Minimum Output Voltage
Output Source Current
Output Sink Current
Offset Voltage to the (+) Pin of the Error Amp &
the VDRP Pin
Input Bias Current
Inverting Voltage Range
Open Loop DC Gain
Open Loop Unity Gain Bandwidth
A
< 70°C; 0°C < T
Parameter
J
< 125°C; 4.75 < V
CC
< 5.25 V; All DAC Codes; C
C
R
C
R
C
R
DV
DV
C
DC Load = ±125 mA to GND
10 mV of Overdrive,
I
10 mV of Overdrive,
I
10 mV of Overdrive,
V
10 mV of Overdrive,
V
DRVON = low
DRVON = high
DRVON = low
DRVON = high
C
R
VS+ to VS− = 0.5 V to 1.6 V
10 mV of Overdrive,
I
10 mV of Overdrive,
I
10 mV of Overdrive,
V
10 mV of Overdrive,
V
C
R
C
R
SOURCE
SINK
SOURCE
SINK
out
out
out
out
L
L
L
L
L
L
L
L
L
L
L
L
L
http://onsemi.com
out
in
= 60 pF to GND,
= 10 kW to GND
= 60 pF to GND,
= 10 kW to GND
= 60 pF to GND,
= 10 kW to GND
= 60 pF to GND,
= 80 pF to GND,
= 10 kW to GND
= 20 pF to GND including ESD
= 1 kW to GND
= 20 pF to GND including ESD
= 1 kW to GND
= 3.5 V
= 0.1 V
= 3 V
= 0.2 V
= 100 mV, G = −10V/V,
= 500 mA
= 1 mA
= 1.5 V − 2.5 V,
= 2.0 mA
= 2 mA
Test Conditions
5
VCC
= 0.1 mF unless otherwise noted.
−200
−200
0.65
−0.3
0.98
Min
3.0
1.5
0.8
3.0
1.5
1.0
−2
0
0.05
0.88
Typ
100
100
2.0
1.0
0.6
6.0
1.0
2.0
1.5
1.3
18
70
10
15
18
0
Max
0.95
1.02
200
200
0.1
3.0
0.5
3.0
75
+2
MHz
MHz
MHz
Unit
V/ms
V/V
mV
mA
mA
mA
mA
mV
nA
dB
kW
nA
dB
V
V
V
V
V
V
°

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