LTC1698EGN Linear Technology, LTC1698EGN Datasheet - Page 15

IC PREC RECT CONTROLLER 16-SSOP

LTC1698EGN

Manufacturer Part Number
LTC1698EGN
Description
IC PREC RECT CONTROLLER 16-SSOP
Manufacturer
Linear Technology
Datasheet

Specifications of LTC1698EGN

Pwm Type
Current Mode
Number Of Outputs
1
Frequency - Max
400kHz
Voltage - Supply
6 V ~ 12.6 V
Buck
Yes
Boost
No
Flyback
No
Inverting
No
Doubler
No
Divider
No
Cuk
No
Isolated
Yes
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SSOP
Frequency-max
400kHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Duty Cycle
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LTC1698EGN
Manufacturer:
LT
Quantity:
10 000
Part Number:
LTC1698EGN
Manufacturer:
LTNEAR
Quantity:
20 000
APPLICATIO S I FOR ATIO
If the application generates a bigger current sense voltage,
a potential divider can be easily obtained by adding a
resistor across C2. With this additional resistor, the volt-
age sensed by the current comparator becomes:
An RC network formed by R
and V
Connecting the compensation network to V
output overshoot during start-up or short-circuit recov-
ery. The R
within the closed-loop crossover frequency. This pin can
be left floating if current loop compensation is not re-
quired. The forward converter secondary current limit func-
tion can be disabled by shorting I
Auxiliary 3.3V Logic Power Supply
An internal P-channel LDO (low dropout regulator) pro-
duces the 3.3V auxiliary supply that can power external
devices or drive the MARGIN pin. This supply can source
up to 10mA of current and the current limit is provided
internally. The pin requires at least a 0.1 F bypass
capacitor.
MOSFET Selection
Two logic-level N-channel power MOSFETs (Q3 and Q4 in
Figure 1) are required for most LTC1698 circuits. They are
selected based primarily on the on-resistance and body
diode considerations. The required MOSFET R
be determined based on input and output voltage, allow-
able power dissipation and maximum required output
current.
The average inductor (L1) current is equal to the output
load current. This current is always flowing through either
Q3 or Q4 with the power dissipation split up according to
the duty cycle:
where N
DC Q
DC Q
R
DIV
OUT
(
(
R
P
3
4
/N
DIV
CILM
)
)
can be used to stabilize the current limit loop.
( •
2
S
1
V
is the turns ratio of the transformer T1.
R
and C
V
OUT
IN
6
)
V
V
U
OUT
V
CILM
IN
N
N
RSENSE
P
S
zero should be chosen to be well
U
N
N
CILM
P
S
SNS
and C
and I
W
CILM
SNSGND
between I
OUT
DS(ON)
U
minimizes
to ground.
should
COMP
The R
be calculated by rearranging the relation P = I
where I
allowable conduction loss.
In a typical 2-transistor forward converter circuit, the duty
cycle is less than 50% to prevent the transformer core
from saturating. This results in the duty cycle of Q4 being
greater than that of Q3. Q4 will dissipate more power due
to the higher duty cycle. A lower R
used for Q4. This will slow down the turn-on time of Q4
since a lower R
capacitance.
The next consideration for the MOSFET is the characteris-
tic of the body diode. The body diodes conduct during the
power-up phase, when the LTC1698 V
ing up and the time-out circuit is adapting to the SYNC
input frequency. The CG and FG signals terminate prema-
turely and the inductor current flows through the body
diodes. The body diodes must be able to take the compa-
rable amount of current as the MOSFETs. Most power
MOSFETs have the same current rating for the body diode
and the MOSFET itself.
The LTC1698 CG and FG MOSFET drivers will dissipate
power. This will increase with higher switching frequency,
higher V
dissipation, the total gate charge Qg is used. This param-
eter is found on the MOSFET manufacturers data sheet.
The power dissipated in each LTC1698 MOSFET driver is:
where f
P
P
P
MAX Q
MAX Q
DRIVER
DS(ON)
R
R
MAX
SW
DS ON Q
DS ON Q
(
(
DD
3
4
(
(
is the switching frequency of the converter.
)
)
= Qg • V
is the maximum load current and P
or larger MOSFETs. To calculate the driver
required for a given conduction loss can now
)
)
I
I
MAX
MAX
3
4
DS(ON)
2
2
I
I
DD
MAX
MAX
R
R
P
P
• f
MOSFET will have a larger gate
MAX Q
MAX Q
DS ON Q
DS ON Q
2
2
SW
(
(
DC Q
DC Q
(
(
)
)
3
4
(
(
)
)
3
4
3
4
DS(ON)
)
)
DC Q
DC Q
(
(
DD
3
4
MOSFET can be
LTC1698
supply is ramp-
)
)
2
MAX
R.
15
is the
1698f

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