LM385D-1.2R2G ON Semiconductor, LM385D-1.2R2G Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
LM385D-1.2R2G
Manufacturer Part Number
LM385D-1.2R2G
Description
DIODE REG MICROPWR 1.235V 8-SOIC
Manufacturer
ON Semiconductor
Datasheet
1.LM285Z-2.5RAG.pdf
(9 pages)
Specifications of LM385D-1.2R2G
Reference Type
Shunt
Voltage - Output
1.235V
Tolerance
±2%
Temperature Coefficient
80ppm/°C
Number Of Channels
1
Current - Cathode
10µA
Current - Output
20mA
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Product
Voltage References
Topology
Shunt References
Output Voltage
1.235 V
Initial Accuracy
2 %
Average Temperature Coefficient (typ)
80 PPM / C
Shunt Current (max)
30 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Shunt Current (min)
0.015 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Input
-
Current - Quiescent
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
LM385D-1.2R2GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LM385D-1.2R2G
Manufacturer:
ON
Quantity:
46
Company:
Part Number:
LM385D-1.2R2G
Manufacturer:
ON
Quantity:
3 590
Part Number:
LM385D-1.2R2G
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. T
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Reverse Current
Forward Current
Operating Ambient Temperature Range
Operating Junction Temperature
Storage Temperature Range
Electrostatic Discharge Sensitivity (ESD)
Reverse Breakdown Voltage (I
Minimum Operating Current
Reverse Breakdown Voltage Change with Current
Reverse Dynamic Impedance
Average Temperature Coefficient
Wideband Noise (RMS)
Long Term Stability
Reverse Breakdown Voltage (I
Minimum Operating Current
I
10 mA v I
T
T
T
R
T
T
I
1.0 mA v I
I
I
T
T
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
low
high
low
high
Rmin
R
R
LM285-1.2/LM385B-1.2
LM385-1.2
A
A
T
T
LM285-2.5/LM385B-2.5
LM385-2.5
A
A
= 100 mA, T
T
T
A
A
= 100 mA, 10 Hz v f v 10 kHz
= 100 mA, T
= 25°C
= T
= 25°C
= T
T
T
A
A
= T
= T
A
A
= T
= T
v I
= -40°C for LM285-1.2, LM285-2.5
= +85°C for LM285-1.2, LM285-2.5
= 0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
= +70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
= T
= T
low
low
low
low
low
low
R
R
low
low
to T
to T
v 20 mA, T
to T
to T
v 1.0 mA, T
R
to T
to T
A
to T
to T
v 20 mA, T
high
high
A
high
high
= +25°C
Characteristic
= +25°C ± 0.1°C
high
high
high
high
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(T
A
A
A
= T
A
= +25°C
= 25°C, unless otherwise noted)
= +25°C
low
Rmin
Rmin
to T
v I
v I
high
Rating
R
R
(T
v 20 mA)
v 20 mA)
(Note 1)
A
= 25°C, unless otherwise noted)
DV
Symbol
DV
LM285, LM385B
V
V
http://onsemi.com
I
I
(BR)
(BR)R
Rmin
(BR)R
Rmin
(BR)R
Z
S
n
/DT
2
1.223
1.200
2.462
2.415
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LM285-1.2
LM285
LM385
1.235
Typ
8.0
0.6
2.5
80
60
20
13
-
-
-
-
-
-
-
-
-
-
-
-
1.247
1.270
2.538
2.585
Max
1.0
1.5
10
20
10
20
20
30
-
-
-
-
-
-
-
-
Symbol
ESD
T
T
T
I
I
stg
R
F
A
J
LM385-1.2/LM385B-1.2
1.223
1.210
1.205
1.192
2.462
2.436
2.425
2.400
Min
-
-
-
-
-
-
-
-
-
-
-
1.235
1.235
Typ
-65 to + 150
8.0
0.6
2.5
2.5
80
60
20
13
-40 to +85
-
-
-
-
-
-
-
-
-
-
0 to +70
Value
+150
4000
2000
400
30
10
1.247
1.260
1.260
1.273
2.538
2.564
2.575
2.600
Max
1.0
1.5
15
20
20
25
20
30
-
-
-
-
ppm/kHR
ppm/°C
Unit
mV
mA
mV
mA
Unit
W
mA
mA
V
V
°C
°C
°C
V