LM385M-1.2/NOPB National Semiconductor, LM385M-1.2/NOPB Datasheet - Page 2

• Manufacturer Part Number: LM385M-1.2/NOPB
• Description: IC VOLT REF DIODE 1.2V 8-SOIC
• Manufacturer: National Semiconductor

Specifications of LM385M-1.2/NOPB

• Reference Type: Shunt
• Voltage - Output: 1.235V
• Tolerance: ±2%
• Temperature Coefficient: 150ppm/°C
• Number Of Channels: 1
• Current - Cathode: 20µA
• Current - Output: 20mA
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Product: Voltage References
• Topology: Shunt References
• Output Voltage: 1.235 V
• Initial Accuracy: 2 %
• Average Temperature Coefficient (typ): 150 PPM/C
• Series Vref - Input Voltage (max): 1.235 V
• Shunt Current (max): 20 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Input: -
• Current - Quiescent: -
• Lead Free Status / Rohs Status: Details
• Other names: *LM385M-1.2; *LM385M-1.2/NOPB; LM385M-1.2

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Reverse Breakdown
Voltage
Minimum Operating
Current
Reverse Breakdown
Voltage Change
with Current
Reverse Dynamic
Impedance
Wideband Noise
(rms)
Long Term Stability
Average Temperature I
Coefficient (Note 7)
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 2)
Electrical Characteristics
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device
is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics.
The guaranteed specifications apply only for the test conditions listed.
Note 2: Refer to RETS185H-1.2 for military specifications.
Note 3: For elevated temperature operation, T
Reverse Current
Forward Current
Operating Temperature Range (Note 3)
LM185 150°C
LM285 125°C
LM385 100°C
LM185-1.2
LM285-1.2
LM385-1.2
Parameter
T
10μA
LM385M3-1.2
10μA
1mA
I
I
10Hz
I
T
X Suffix
Y Suffix
All Others
R
R
R
R
A
A
= 100μA, f = 20Hz
= 100μA,
= 100μA, T = 1000 Hr,
= 100μA
= 25°C,
= 25°C ±0.1°C
≤
≤
≤
≤
Conditions
I
I
I
R
f
R
R
≤
≤
≤
≤
10kHz
20mA
20mA
1mA
j
max is:
−55°C to +125°C
−40°C to +85°C
(Note 4)
0°C to 70°C
(Note 1)
1.23
Typ
60
20
5
8
1
30mA
10mA
(Notes 5,
Tested
Limit
1.223
1.247
LM185BX-1.2
LM185BY-1.2
LM285BX-1.2
LM285BY-1.2
10
10
30
50
8)
1
LM185-1.2
LM285-1.2
2
(Note 6)
Design
Limit
ESD Susceptibility (Note 9)
Storage Temperature
Soldering Information
SO and SOT Pkg.
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
150
1.5
20
20
TO-92 package: 10 sec.
TO-46 package:10 sec.
Vapor phase (60 sec.)
Infrared (15 sec.)
(Note 5)
Tested
1.223
1.247
Limit
LM385BX-1.2
LM385BY-1.2
15
20
30
50
LM385B-1.2
1
(Note 6)
Design
Limit
150
1.5
20
25
(Note 5)
Tested
1.205
1.260
Limit
15
10
20
1
LM385-1.2
−55°C to +150°C
(Note 6)
Design
Limit
150
1.5
20
15
25
260°C
300°C
215°C
220°C
V(Max)
ppm/°C
ppm/°C
ppm/°C
(Limit)
V(Min)
(Max)
(Max)
(Max)
(Max)
2kV
Units
ppm
mV
mV
μA
μV
Ω