BSP75NTA Diodes Zetex, BSP75NTA Datasheet - Page 3

• Manufacturer Part Number: BSP75NTA
• Description: MOSFET N-CH 60V 1.2A SOT-223
• Manufacturer: Diodes Zetex
• Series: INTELLIFET™r
• Type: Low Sider

Specifications of BSP75NTA

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 385 mOhm
• Current - Output / Channel: 1.3A
• Current - Peak Output: 1.8A
• Voltage - Supply: 2.2 V ~ 10 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Switch Type: Low Side
• Power Switch Family: BSP75N
• Input Voltage: -0.2 to 20V
• Power Switch On Resistance: 520mOhm
• Output Current: 700mA
• Mounting: Surface Mount
• Package Type: SOT-223
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 3 +Tab
• Power Dissipation: 1.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant
• Other names: BSP75NTR

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
(b) For a device surface mounted on FR4 board as (a) and measured at t<=10s.
(c) For a device surface mounted on FR4 board with the minimum copper required for connections.
Issue 4 - September 2006
© Zetex Semiconductors plc 2006
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection V
Drain-source voltage for short circuit protection V
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation at T
Power dissipation at T
Continuous drain current @ V
Continuous drain current @ V
Continuous drain current @ V
Continuous source current (body diode)
Pulsed source current (body diode)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
copper. Allocation of 6cm
(a)
(b)
(c)
A
A
2
copper 33% to source tab and 66% to drain pin with tab and drain pin electrically isolated.
=25°C
=25°C
IN
IN
IN
(a)
(c)
=10V; T
=5V; T
=5V; T
(b)
A
A
A
=25°C
=25°C
=25°C
(a)
(a)
(c)
(a)
3
IN
IN
= 5V
= 10V
Symbol
V
V
V
V
V
T
T
P
P
I
I
I
I
I
E
V
V
Symbol
R
R
R
D
D
D
S
S
stg
j
D
D
AS
DS
DS(SC)
DS(SC)
IN
IN
LoadDump
ESD
,
JA
JA
JA
-40 to +150
-55 to +150
-0.2 ... +10
-0.2 ... +20
40/150/56
Limit
Limit
4000
550
208
0.6
2.0
3.3
60
36
20
1.5
1.3
1.1
0.7
80
83
45
E
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BSP75N
°C/W
°C/W
°C/W
Unit
Unit
mJ
°C
W
W
°C
A
A
A
A
A
V
V
V
V
V
V
V