VO3120-X007T Vishay, VO3120-X007T Datasheet - Page 6

• Manufacturer Part Number: VO3120-X007T
• Description: IC DRIVER IGBT/MOSFET 2.5A 8-SMD
• Manufacturer: Vishay
• Type: High Side/Low Side Driverr

Specifications of VO3120-X007T

• Isolation Voltage: 5300 Vrms
• Input Type: Non-Inverting
• Number Of Outputs: 1
• Current - Output / Channel: 500mA
• Current - Peak Output: 2.5A
• Voltage - Supply: 15 V ~ 32 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 8-SMD (300 mil)
• Fall Time: 0.1 us
• Logic Gate Type: IGBT
• Rise Time: 0.1 us
• Configuration: 1 Channel
• Output Type: Integrated Photo IC
• Maximum Propagation Delay Time: 0.4 us
• Maximum Forward Diode Voltage: 1.6 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Forward Diode Current: 25 mA
• Maximum Continuous Output Current: 2.5 A
• Maximum Power Dissipation: 295 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• No. Of Channels: 1
• Optocoupler Output Type: Gate Drive
• Input Current: 16mA
• Output Voltage: 500mV
• Opto Case Style: SMD
• No. Of Pins: 8
• Output Current: 2.5A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• On-state Resistance: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1475-2

VO3120
Vishay Semiconductors
Note
• As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is reinforced rated and suitable for “safe electrical insulation” only within the safety
TYPICAL CHARACTERISTICS (T
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
(according to IEC 68 part 1)
Comparative tracking index
Peak transient overvoltage
Peak insulation voltage
Safety rating - power output
Safety rating - input current
Safety rating - temperature
Creepage distance
Clearance distance
Creepage distance
Clearance distance
ratings. Compliance with the safety ratings shall be ensured by means of protective circuits.
21745
21746
Fig. 9 - High Output Voltage Drop vs. Temperature
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
- 3.0
0.0
Fig. 10 - High Output Current vs. Temperature
4
3
2
1
0
- 40 - 20
- 40 - 20
I
I
V
V
F
OUT
I
V
V
V
F
CC
EE
out
CC
EE
= 16 mA
= 16 mA
= 0 V
= 32 V
= - 100 mA
= (V
= 0 V
= 15 V
0
0
Temperature (°C)
Temperature (°C)
CC
20
- 4) V
20
40
40
60
60
For technical questions, contact:
80 100 120
80 100 120
amb
2.5 A Output Current IGBT and
This datasheet is subject to change without notice.
= 25 °C, unless otherwise specified)
TEST CONDITION
Standard DIP-8
Standard DIP-8
400 mil DIP-8
400 mil DIP-8
MOSFET Driver
[e-mail]
SYMBOL
21748
21751
V
V
CTI
P
IORM
IOTM
T
I
SO
SI
SI
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Fig. 11 - Output Low Voltage vs. Temperature
Fig. 12 - Output Low Current vs. Temperature
3.5
2.5
1.5
0.5
- 40 - 20
- 40 - 20 0
I
V
V
V
F
out
CC
EE
= 0 mA
MIN.
8000
175
890
= 0 V
= 2.5 V
= 15 V
7
7
8
8
0
Temperature (°C)
Temperature (°C)
20
20
40/110/21
TYP.
40
40
60
V
I
V
V
www.vishay.com/doc?91000
OUT
F
CC
EE
60
Document Number: 81314
= 0.8 V
= 32 V
= 0 V
= 100 mA
80 100 120
80 100
MAX.
399
500
300
175
Rev. 1.3, 15-Mar-11
UNIT
mW
mm
mm
mm
mm
mA
°C
V
V