DRDNB21D-7 Diodes Inc, DRDNB21D-7 Datasheet - Page 2

• Manufacturer Part Number: DRDNB21D-7
• Description: ARRAY DUAL RLY DVR SOT-363
• Manufacturer: Diodes Inc
• Type: Low Sider

Specifications of DRDNB21D-7

• Input Type: Non-Inverting
• Number Of Outputs: 2
• Current - Peak Output: 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• On-state Resistance: -
• Other names: DRDNB21D-7; DRDNB21D-7DITR

Maximum Ratings
Maximum Ratings
Maximum Ratings, Switching Diode
Electrical Characteristics, Pre-Biased NPN Transistor
Electrical Characteristics, Switching Diode
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Junction Temperature Range
Collector-Emitter Voltage
Base-Emitter Voltage
Output Current
Peak Collector Current
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Average Rectified Output Current (Note 4)
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
*
Notes:
DRDNB21D
Document number: DS30756 Rev. 6 - 2
Transistor - For Reference Only
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
5. Short duration pulse test used to minimize self-heating effect.
can be found on our website at http://www.diodes.com
Characteristic
Characteristic
Characteristic
Characteristic
Characteristic
, Total Device
, Pre-Biased NPN Transistor
@ t = 1.0s
@T
A
= 25°C unless otherwise specified
@T
Symbol
A
V
Symbol
ΔR2/R1
= 25°C unless otherwise specified
V
(BR)R
C
V
V
I
V
ΔR1
I
t
O(off)
R
O(on)
rr
www.diodes.com
G
F
l(off)
l(on)
T
f
I
T
l
l
T
Symbol
@T
Symbol
Symbol
@T
V
2 of 7
J
V
V
R
R(RMS)
V
I
, T
V
I
I
P
V
RWM
V
FSM
0.62
RRM
CM
Min
I
FM
I
θ JA
CC
RM
A
O
O
A
75
⎯
⎯
⎯
⎯
⎯
⎯
Min
D
in
R
-30
-20
0.5
STG
80
⎯
⎯
⎯
⎯
⎯
= 25°C unless otherwise specified
= 25°C unless otherwise specified
0.855
Typ
Max
0.72
1.25
250
1.0
2.5
4.0
4.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
30
25
⎯
@T
A
= 25°C unless otherwise specified
Max
+30
+20
1.1
0.3
3.6
0.5
⎯
⎯
⎯
Unit
μA
μA
μA
nA
pF
ns
V
V
-55 to +150
-5 to +12
Value
Value
Value
MHz
Unit
200
625
100
100
100
500
250
mA
uA
4.0
1.0
⎯
%
%
50
75
53
V
V
V
I
I
I
I
I
V
V
V
V
V
I
R
F
F
F
F
F
R
R
R
R
R
= 5.0mA
= 10mA
= 100mA
= 150mA
= I
= 10μA
= 75V
= 75V, T
= 25V, T
= 20V
= 0, f = 1.0MHz
R
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
= 10mA, I
/I
= 5V
l
= 0.3V, I
= 5V, I
= 50mA/0.25mA
= 10V, I
= 5V, I
= 50V, V
J
J
Test Condition
= 150°C
= 150°C
O
Test Condition
O
O
= 10mA
rr
E
= 100μA
I
= 0.1 x I
= 5mA
= 5mA, f = 100MHz
= 0V
DRDNB21D
-
-
°C/W
© Diodes Incorporated
Unit
Unit
Unit
mW
mA
mA
mA
mA
R
°C
V
V
V
V
V
A
, R
February 2011
L
= 100Ω