IR1166SPBF International Rectifier, IR1166SPBF Datasheet - Page 13

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IR1166SPBF

Manufacturer Part Number
IR1166SPBF
Description
IC REG CTLR SW 200V 8-SOIC
Manufacturer
International Rectifier
Series
SmartRectifier™r
Datasheet

Specifications of IR1166SPBF

Configuration
Low-Side
Input Type
Self Oscillating
Delay Time
50ns
Current - Peak
1A
Number Of Configurations
1
Number Of Outputs
1
Voltage - Supply
11.4 V ~ 18 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Part Status
Active and Preferred
Package
8-Pin SOIC(NB)
Circuit
Switching Regulator Controller
Topology
Flyback / Resonant Half-Bridge
Current Mode
Discontinuous / Critical / Continuous
Vcc (min)
11.4
Vcc (max)
18
Vout (max)
200
Iout (a)
+1 / -4
Switch Freq (khz)
up to 500kHz
Vgate Clamp (v)
10.7
Programmability
MOT / OVT
Enable Pin
Yes
Isleep (ua)
200
Automatic Mot Protection
No
Pbf
PbF Option Available
For Use With
IRAC1166-100W - BOARD DEMO 100W FOR IR1166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Switching Freq, T
www.irf.com
Figures 11-14 shows the maximum allowable V
different loads which are calculated using the design methodology discussed in AN1087.
Fig 13.
Max. Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
1W HEXFET Gate Resistance included
50
Max. V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Voltage vs. Synchronous Rectifier
IC
= 85 C, external R
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
G
=4W,
CC
voltage vs. maximum switching frequency for
Switching Freq, T
Fig 14.
Maximum Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
1W HEXFET Gate Resistance included
50
Max V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Voltage vs. Synchronous Rectifier
IC
= 85 C, external R
IR1166S
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
G
=6W,
13

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