MIC4427BN Micrel Inc, MIC4427BN Datasheet - Page 6
![IC DRIVER MOSFET 1.5A DUAL 8DIP](/photos/7/39/73990/576-8-dip_sml.jpg)
MIC4427BN
Manufacturer Part Number
MIC4427BN
Description
IC DRIVER MOSFET 1.5A DUAL 8DIP
Manufacturer
Micrel Inc
Datasheet
1.MIC4427ZM_TR.pdf
(9 pages)
Specifications of MIC4427BN
Mounting Type
Through Hole
Configuration
Low-Side
Input Type
Non-Inverting
Delay Time
17ns
Current - Peak
1.5A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Device Type
MOSFET
Driver Case Style
DIP
No. Of Pins
8
Rise Time
18ns
Peak Output High Current, Ioh
1.5A
Supply Voltage Min
4.5V
Peak Reflow Compatible (260 C)
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MIC4427BN
Manufacturer:
MIC
Quantity:
20 000
MIC4426/4427/4428
Electrical Characteristics
M9999-042108
35
30
25
20
15
10
2.5
2.0
1.5
1.0
0.5
70
60
50
40
30
20
10
30
20
10
5
0
0
0
0
-75
0
1
Quiescent Power Supply Current
0
Supply Current vs. Frequency
T = 25°C
C = 1000pF
-50
C = 1000pF
T = 25°C
C = 1000pF
V = 18V
A
L
S
A
L
L
Rise and Fall Time vs.
-25 0
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
vs. Supply Voltage
TEMPERATURE (°C)
5
FREQUENCY (kHz)
5
NO LOAD
BOTH INPUTS LOGIC "1"
T = 25°C
A
Supply Voltage
Delay Time vs.
10
Temperature
25 50
t
F
10
10
5 V
t
R
100
75 100 125
V = 18V
S
15
15
10 V
t
D1
t
D2
1000
20
20
150
1.20
0.96
0.72
0.48
0.24
400
300
200
150
100
35
30
25
20
15
10
50
80
70
60
50
40
30
20
10
0
5
0
0
0
10
0 10 20 30 40 50 60 70 80 90 100
0
0
Quiescent Power Supply Current
T = 25°C
V = 18V
T = 25°C
CURRENT SOURCED (mA)
S
A
A
High Output vs. Current
CAPACITIVE LOAD (pF)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
vs. Supply Voltage
5
5
Supply Current vs.
NO LOAD
BOTH INPUTS LOGIC "0"
T = 25°C
t
Supply Voltage
A
Delay Time vs.
Capacitive Load
100
D1
6
10
10
t
D2
C = 1000pF
T = 25°C
1000
A
V = 5V
L
C
15
15
400kHz
15 V
20kHz
10 V
200
kHz
10000
20
20
1250
1000
1.20
0.96
0.72
0.48
0.24
750
500
250
100
40
30
20
10
1k
10
0
0
-75
1
25
10
0 10
-50
AMBIENT TEMPERATURE (°C)
C = 1000pF
V = 18V
Package Power Dissipation
T = 25°C
T = 25°C
V = 18V
S
A
L
A
S
Low Output vs. Current
50
Rise and Fall Time vs.
CAPACITIVE LOAD (pF)
20 30 40 50 60 70 80 90 100
-25 0
CURRENT SUNK (mA)
t
Rise and Fall Time vs.
TEMPERATURE (°C)
R
100
Capacitive Load
Temperature
PDIP
SOIC
75
25 50
100
1000
V = 5V
S
75 100 125
15 V
125
t
F
10 V
t
10000
R
t
Micrel, Inc.
150
150
F
April 2008