IXDD408PI IXYS, IXDD408PI Datasheet - Page 9

• Manufacturer Part Number: IXDD408PI
• Description: IC MOSFET DRIVER LS 8A SGL 8-DIP
• Manufacturer: IXYS
• Type: Low Side Gate Driverr

Specifications of IXDD408PI

• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 38ns
• Current - Peak: 8A
• Number Of Configurations: 1
• Number Of Outputs: 1
• Voltage - Supply: 4.5 V ~ 25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP
• Rise Time: 18 ns
• Fall Time: 19 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 3 mA
• Maximum Power Dissipation: 975 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Output Current: 8 A
• For Use With: EVDD408 - EVALUATION BOARD FOR IXDD408 DVR
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: IXDD 408PI; IXDD 408PI

Supply Bypassing and Grounding Practices,
Output Lead inductance
When designing a circuit to drive a high speed MOSFET
utilizing the IXDD408, it is very important to keep certain design
criteria in mind, in order to optimize performance of the driver.
Particular attention needs to be paid to Supply Bypassing,
Grounding, and minimizing the Output Lead Inductance.
Say, for example, we are using the IXDD408 to charge a
5000pF capacitive load from 0 to 25 volts in 25ns…
Using the formula: I= V C / t, where V=25V C=5000pF &
in 25ns will take a constant current of 5A. (In reality, the charging
current won’t be constant, and will peak somewhere around
8A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXDD408
must be able to draw this 5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the
power supply at the driver with a capacitance value that is a
magnitude larger than the load capacitance. Usually, this
would be achieved by placing two different types of bypassing
capacitors, with complementary impedance curves, very close
to the driver itself. (These capacitors should be carefully
selected, low inductance, low resistance, high-pulse current-
service capacitors). Lead lengths may radiate at high frequency
due to inductance, so care should be taken to keep the lengths
of the leads between these bypass capacitors and the IXDD408
to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXDD408
must be able to drain this 5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDD408
and it’s load. Path #2 is between the IXDD408 and it’s power
supply. Path #3 is between the IXDD408 and whatever logic
is driving it. All three of these paths should be as low in
resistance and inductance as possible, and thus as short as
practical. In addition, every effort should be made to keep these
three ground paths distinctly separate.
instance), the returning ground current from the load may
develop a voltage that would have a detrimental effect on the
logic line driving the IXDD408.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and it’s
load as short and wide as possible. If the driver must be placed
farther than 2” from the load, then the output leads should be
treated as transmission lines. In this case, a twisted-pair
should be considered, and the return line of each twisted pair
should be placed as close as possible to the ground pin of the
driver, and connect directly to the ground terminal of the load.
t=25ns we can determine that to charge 5000pF to 25 volts
Otherwise, (for
9
TTL to High Voltage CMOS Level Translation
The enable (EN) input to the IXDD408 is a high voltage
CMOS logic level input where the EN input threshold is ½ V
and may not be compatible with 5V CMOS or TTL input levels.
The IXDD408 EN input was intentionally designed for
enhanced noise immunity with the high voltage CMOS logic
levels. In a typical gate driver application, V
EN input threshold at 7.5V, a 5V CMOS logical high input
applied to this typical IXDD408 application’s EN input will be
misinterpreted as a logical low, and may cause undesirable
or unexpected results. The note below is for optional
adaptation of TTL or 5V CMOS levels.
The circuit in Figure 28 alleviates this potential logic level
misinterpretation by translating a TTL or 5V CMOS logic input
to high voltage CMOS logic levels needed by the IXDD408 EN
input. From the figure, V
typically set between 8V to 20V, and V
supply, typically between 3.3V to 5.5V. Resistors R1 and R2
form a voltage divider network so that the Q1 base is
positioned at the midpoint of the expected TTL logic transition
levels.
the Q1 emitter will drive it on. This causes the level translator
output, the Q1 collector output to settle to V
V
interpreted as a high voltage CMOS logic low (<1/3V
V
A TTL high, V
V
Figure 28 will cause Q1 to be biased off. This results in Q1
collector being pulled up by R3 to V
high voltage CMOS logic high output. The high voltage CMOS
logical EN output applied to the IXDD408 EN input will enable
it, allowing the gate driver to fully function as an 8 Amp output
driver.
The total component cost of the circuit in Figure 28 is less
than $0.10 if purchased in quantities >1K pieces. It is
recommended that the physical placement of the level
translator circuit be placed close to the source of the TTL or
CMOS logic circuits to maximize noise rejection.
Figure 28 - TTL to High Voltage CMOS Level Translator
A TTL or 5V CMOS logic low, V
(From Gate Driver
(From Logic
Power Supply)
Power Supply)
TTLLOW
CC
5VCMOSHIGH
or
=15V given in the IXDD408 data sheet.)
TTL
=<~2V, which is sufficiently low to be correctly
V
Input)
CC
DD
=~>3.5V, applied to the EN input of the circuit in
IXDD408PI/408SI/408YI/408CI
TTLHIGH
=>~2.4V, or a 5V CMOS high,
3.3K
3.3K
CC
R1
R2
is the gate driver power supply,
10K
TTLLOW
R3
Q1
2N3904
CC
=~<0.8V, input applied to
=15V, and provides a
DD
is the logic power
CC
CESATQ1
=15V and the
(To IXDD408
Output
CMOS
High Voltage
EN Input)
+
CC
=5V for
EN
CC
,