MAX8791GTA+ Maxim Integrated Products, MAX8791GTA+ Datasheet - Page 7

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MAX8791GTA+

Manufacturer Part Number
MAX8791GTA+
Description
IC MOSFET DRIVER 8-TQFN
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of MAX8791GTA+

Configuration
High and Low Side, Synchronous
Input Type
PWM
Delay Time
14ns
Current - Peak
2.7A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
36V
Voltage - Supply
4.2 V ~ 5.5 V
Operating Temperature
-40°C ~ 105°C
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 1. Typical Components
Figure 3. Typical MOSFET-Driver Application Circuit
The MAX8791/MAX8791B single-phase gate drivers,
along with the MAX8736 or MAX8786 multiphase con-
trollers, provide flexible multiphase CPU core-voltage
supplies. The low driver resistance allows up to 7A out-
put peak current. Each MOSFET driver in the
MAX8791/MAX8791B is capable of driving 3nF capaci-
tive loads with only 9ns propagation delay and 4ns/8ns
(typ) fall/rise times, allowing operation up to 3MHz per
phase. Larger capacitive loads are allowable but result
in longer propagation and transition times. Adaptive
dead-time control prevents shoot-through currents and
maximizes converter efficiency while allowing operation
with a variety of MOSFETs and PWM controllers. An
input undervoltage lockout (UVLO) circuit allows proper
power-on sequencing.
N
N
BST Capacitor (C
Schottky Diode
Inductor (L1)
Output Capacitors (C
Input Capacitors (C
H
L
+5V BIAS
SUPPLY
Single-Phase, Synchronous MOSFET Drivers
DESIGNATION
PWM
BST
IN
_______________________________________________________________________________________
)
OUT
SKIP
)
1.0µF
CV
)
DD
Detail Description
PWM
SKIP
V
DD
MAX8791B
MAX8791
PAD
1–2 per phase
1–2 per phase
1–2 per phase
1 per phase
1 per phase
1 per phase
Optional
QTY
GND
BST
DH
LX
DL
The drivers for the MAX8791/MAX8791B are disabled—
DH and DL pulled low—if the PWM input remains in the
midlevel window for at least 300ns (typ). Once the
PWM signal is driven high or low, the MAX8791/
MAX8791B immediately exit the low-current shutdown
state and resume active operation. Outside the shut-
down state, the drivers are enabled based on the rising
and falling thresholds specified in the Electrical
Characteristics .
The high-side driver (DH) has a 0.9Ω sourcing resis-
tance and 0.7Ω sinking resistance, resulting in 2.2A
peak sourcing current and 2.7A peak sinking current
with a 5V supply voltage. The low-side driver (DL) has a
typical 0.7Ω sourcing resistance and 0.3Ω sinking
resistance, yielding 2.7A peak sourcing current and 8A
peak sinking current. This reduces switching losses,
making the MAX8791/MAX8791B ideal for both high-
frequency and high output-current applications.
C
0.22µF
BST
N
N
H
L
Siliconix Si4860DY
Siliconix Si4336DY
0.1µF or 0.22µF ceramic capacitor
3A, 40V Schottky diode
0.36µH, 26A, 0.9mΩ power inductor
330µF, 6mΩ per phase
10µF, 25V X5R ceramic capacitors
MOSFET Gate Drivers (DH, DL)
D
L
0.36µH
L1
COMPONENT SUPPLIERS
C
2x 10µF
IN
C
2x 330µF
6mΩ
OUT
INPUT (V
OUTPUT (V
PWM Input
IN
)
OUT
)
7

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