ISL6622ACBZ Intersil, ISL6622ACBZ Datasheet - Page 9

• Manufacturer Part Number: ISL6622ACBZ
• Description: IC MOSFET DRVR SYNC BUCK 8-SOIC
• Manufacturer: Intersil

Specifications of ISL6622ACBZ

• Configuration: High and Low Side, Synchronous
• Input Type: PWM
• Delay Time: 20ns
• Current - Peak: 1.25A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 36V
• Voltage - Supply: 6.8 V ~ 13.2 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISL6622
ISL6622A
ISL6622B
FIGURE 5. GATE-TO-SOURCE RESISTOR TO REDUCE
UVCC
POWER RAILS
UPPER MOSFET MILLER COUPLING
DU
DL
SOIC
SOIC
SOIC
DFN
DFN
DFN
UGATE
BOOT
PHASE
C
BOOT
Programmable
9
PSI = LOW
G
5.75V
R
C
GI
Programmable
GD
Own Rail
Own Rail
C
GS
LVCC
5.75V
S
TABLE 1. ISL6622 FAMILY OPTIONS
VIN
Q
UPPER
D
C
DS
PSI = HIGH
11.2V
11.2V
ISL6622A
Gate Drive Voltage Options
Intersil provides various gate drive voltage options in
ISL6622 product family, as shown in Table 2.
The ISL6622 can drop the low-side MOSFET’s gate drive
voltage when operating in DEM, while the high-side FET’s
gate drive voltage of the DFN package can be connected to
VCC or LVCC.
The ISL6622A allows the low-side MOSFET(s) to operate
from an externally-provided rail as low as 5V, eliminating the
LDO losses, while the high-side MOSFET’s gate drive
voltage of the DFN package can be connected to VCC or
LVCC.
The ISL6622B sets the low-side MOSFET’s gate drive
voltage at a fixed, programmable LDO level, while the high-
side FETs’ gate drive voltage of the DFN package can be
connected to VCC or LVCC.
Own Rail
Own Rail
Own Rail
UVCC
VCC
VCC
VCC
Operating Voltage Ranges from 6.8V to 13.2V
VCC
March 19, 2009
FN6601.2