LM5106MMX/NOPB National Semiconductor, LM5106MMX/NOPB Datasheet - Page 3

• Manufacturer Part Number: LM5106MMX/NOPB
• Description: IC DVR HALF-BRIDGE HV 10-MSOP
• Manufacturer: National Semiconductor

Specifications of LM5106MMX/NOPB

• Configuration: Half Bridge
• Input Type: PWM
• Delay Time: 115ns
• Current - Peak: 1.8A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 118V
• Voltage - Supply: 8 V ~ 14 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-MSOP, Micro10™, 10-uMAX, 10-uSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LM5106MMX

SUPPLY CURRENTS
I
I
I
I
I
I
INPUT IN and EN
V
V
R
DEAD-TIME CONTROLS
VRDT
IRDT
UNDER VOLTAGE PROTECTION
V
V
V
V
LO GATE DRIVER
V
V
I
I
HO GATE DRIVER
V
V
I
I
THERMAL RESISTANCE
θ
DD
DDO
HB
HBO
HBS
HBSO
OHL
OLL
OHH
OLH
JA
IL
IH
DDR
DDH
HBR
HBH
OLL
OHL
OLH
OHH
pd
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
apply over the full operating junction temperature range. Unless otherwise specified, V
5V. No load on LO or HO. RDT= 100kΩ
Symbol
V
HB to HS
IN and EN to V
LO to V
HO to V
HS to V
HB to V
DD
to V
SS
SS
SS
SS
SS
(Note
V
V
Total HB Quiescent Current
Total HB Operating Current
HB to V
HB to V
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Pulldown Resistance Pin IN and EN
Nominal Voltage at RDT
RDT Pin Current Limit
V
V
HB Rising Threshold
HB Threshold Hysteresis
Low-Level Output Voltage
High-Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
Low-Level Output Voltage
High-Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
Junction to Ambient
DD
DD
DD
DD
SS
Quiescent Current
Operating Current
Rising Threshold
Threshold Hysteresis
6)
SS
SS
Current, Quiescent
Current, Operating
Parameter
HS – 0.3V to HB + 0.3V
–0.3V to V
–0.3V to V
(Note
–0.3V to +18V
–0.3V to +18V
Specifications in standard typeface are for T
−5V to +100V
4).
(Note
DD
DD
+ 0.3V
+ 0.3V
1)
118V
IN = EN = 0V
f = 500 kHz
IN = EN = 0V
f = 500 kHz
HS = HB = 100V
f = 500 kHz
RDT = 0V
I
I
V
LO = 0V
LO = 12V
I
I
V
HO = 0V
HO = 12V
(Note
LO
LO
HO
HO
OHL
OHH
= 100 mA
= –100 mA,
= 100 mA
= –100 mA,
3
= V
= HB – HO
3),
Conditions
DD
Recommended Operating
Conditions
(Note
RDT to V
Junction Temperature
Storage Temperature Range
ESD Rating HBM
V
HS
HB
HS Slew Rate
Junction Temperature
DD
– V
(Note
LO
5)
SS
6)
(Note
DD
J
= +25°C, and those in boldface type
0.75
Min
100
0.8
2.7
6.2
5.9
= HB = 12V, V
2)
0.34
0.06
0.21
0.21
Typ
200
2.1
1.5
0.1
0.5
1.8
1.8
1.5
6.9
0.5
6.6
0.4
0.5
1.2
1.8
0.5
1.2
1.8
40
3
HS + 8V to HS + 14V
SS
= HS = 0V, EN =
–55°C to +150°C
–40°C to +125°C
Max
2.25
0.85
0.85
500
0.6
3.5
0.2
2.2
3.3
7.6
7.3
0.4
0.4
10
3
+8V to +14V
–1V to 100V
–0.3V to 5V
www.national.com
<50V/ns
+150°C
1.5 kV
Units
°C/W
mA
mA
mA
mA
mA
mA
kΩ
µA
V
V
V
V
V
V
V
V
V
A
A
V
V
A
A