IX2R11S3T/R IXYS, IX2R11S3T/R Datasheet - Page 12

• Manufacturer Part Number: IX2R11S3T/R
• Description: IC DRVR HALF BRIDGE 2A 16-SOIC
• Manufacturer: IXYS
• Type: High Side/Low Sider

Specifications of IX2R11S3T/R

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 140ns
• Current - Peak: 2A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 500V
• Voltage - Supply: 10 V ~ 35 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC
• Rise Time: 23 ns
• Fall Time: 22 ns
• Supply Voltage (min): 10 V
• Maximum Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 36
Figure 38
IXYS reserves the right to change limits, test conditions, and dimensions.
120
100
2.5
1.5
0.5
80
60
40
20
3
2
1
0
0
-100
Offset Leakage Current vs. High Side Offset Voltage
0
Output Sourcing Current vs. Temperature
100
-50
High Side Offset Voltage (V)
200
V
DD
Temperature (C)
, V
300
0
CL
, V
CH
400
= 15V
50
500
100
600
700
150
12
Figure 37
Figure 39
106
104
102
100
2.5
1.5
0.5
98
96
94
92
90
2
1
0
-100
-100
Offset Leakage Current vs. Temperature
Output Sinking Current vs. Temperture
High Side Offset Voltage = 600V
-50
-50
V
Temperature (C)
DD
Temperature (C)
, V
0
0
CL
, V
CH
50
50
= 15V
IX2R11
100
100
150
150