ZXGD3103N8TC Diodes Zetex, ZXGD3103N8TC Datasheet

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ZXGD3103N8TC

Manufacturer Part Number
ZXGD3103N8TC
Description
SEMICONDUCTOR OTHER
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXGD3103N8TC

Configuration
High or Low Side
Input Type
Non-Inverting
Delay Time
150ns
Current - Peak
2.5A
Number Of Configurations
2
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
180V
Voltage - Supply
5 V ~ 15 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXGD3103N8TCTR

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ZXGD3103N8TC
Manufacturer:
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Description
The ZXGD3103 is intended to drive MOSFETS
configured as ideal diode replacements. The
device is comprised of a differential amplifier
detector stage and high current driver. The
detector monitors the reverse voltage of the
MOSFET such that if body diode conduction
occurs a positive voltage is applied to the
MOSFET’s Gate pin.
Features
Pin out details
Ordering information
ZXGD3103N8
Document number: DS32255 Rev. 2 - 2
ZXGD3103N8TC Production
GATEH 4
GATEL 3
Proportional Gate Drive
Turn-off propagation delay 15ns and turn-off
Detector threshold voltage ~10mV
Standby current 5mA
Suitable
Critical
Continuous Mode (CCM) operation
5-15V V
time 20ns.
REF
N/C 1
Device
2
CC
Conduction
for
range
SO-8
Discontinuous
Status
Mode
Package
8 DRAIN
7 BIAS
6 GND
5 V
SO8
Mode
CC
(CrCM)
(DCM),
ZXGD3103
Part Mark
www.diodes.com
and
1 of 12
SYNCHRONOUS MOSFET CONTROLLER
Once the positive voltage is applied to the Gate
the MOSFET switches on allowing reverse current
flow. The detectors’ output voltage is then
proportional to the MOSFET Drain-Source reverse
voltage drop and this is applied to the Gate via the
driver. This action provides a rapid turn off as
current decays.
Applications
Typical Configuration
Flyback Converters in:
Resonant Converters
Reel size
(inches)
13
Adaptors
LCD Monitors
Server PSU’s
Set Top Boxes
LCD TV
LED TV
High power Adaptors
Street Lighting
ATX psu
Diodes Incorporated
A Product Line of
Tape width
(mm)
12
ZXGD3103N8
Quantity per reel
© Diodes Incorporated
2500
July 2010

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ZXGD3103N8TC Summary of contents

Page 1

... REF 2 GATEL 3 GATEH 4 SO-8 Ordering information Device Status ZXGD3103N8TC Production ZXGD3103N8 Document number: DS32255 Rev Diodes Incorporated SYNCHRONOUS MOSFET CONTROLLER Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors’ output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver ...

Page 2

Absolute maximum ratings Parameter 1 Supply voltage 1 Continuous Drain pin voltage GATEH and GATEL output Voltage Driver peak source current Driver peak sink current Reference current Bias voltage Bias current Power dissipation at T =25°C A Operating junction temperature ...

Page 3

Electrical characteristics at T Parameter Symbol Input and supply characteristics Operating current Gate Driver Turn-off Threshold Voltage(**) GATE output voltage (**) Switching performance (“) for Q Turn on Propagation delay Turn off Propagation delay Gate rise time Gate fall time ...

Page 4

Schematic Symbol and Pin Out Details Pin No. Name Description and function Internal connection Reference 2 REF This pin is connected to V Gate turn off 3 GATEL This pin sinks current, I Gate turn on 4 ...

Page 5

See Resistor Table for Values 0 -100 -80 -60 -40 V Drain Voltage (mV) D Transfer Characteristic -10 -15 -20 -25 -50 - Temperature (°C) Drain Sense ...

Page 6

-0.5 0.0 0.5 μ Time ( Switch On Speed 0.3 0.2 0.1 0.0 -0.5 0.0 0.5 Time ( Gate Drive On Current V =10V =3k3 BIAS R =4K3 ...

Page 7

Application information The purpose of the ZXGD3103 is to drive a MOSFET as a low-V power converters. When combined with a low R improvement, whilst maintaining design simplicity and incurring minimal component count. Figure 1 and 2 show typical configuration ...

Page 8

Descriptions of the normal operation The operation of the device is described step-by-step with reference to the timing diagram in Figure 3. 1. The detector monitors the MOSFET Drain-Source voltage. 2. When, due to transformer action, the MOSFET body diode ...

Page 9

Typical waveforms Fig 4b: Typical switch ON speed when driving a Q Fig 4c: Typical switch OFF speed when driving a Q ZXGD3103N8 Document number: DS32255 Rev Fig 4a: Critical conduction mode Sw itch On Speed 10 ...

Page 10

Design considerations It is advisable to decouple the ZXGD3103 closely to V currents with a 1μF X7R type ceramic capacitor as shown in Figure 2. The Gate pins should be as close to the MOSFET’s gate as possible. Also the ...

Page 11

Package Outline and Dimensions ZXGD3103N8 Document number: DS32255 Rev Product Line of Diodes Incorporated www.diodes.com ZXGD3103N8 July 2010 © Diodes Incorporated ...

Page 12

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...

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