MAX15018AASA+ Maxim Integrated Products, MAX15018AASA+ Datasheet - Page 9

• Manufacturer Part Number: MAX15018AASA+
• Description: IC MOSF DRVR HALF BRDG HS 8-SOIC
• Manufacturer: Maxim Integrated Products
• Type: High Side/Low Sider

Specifications of MAX15018AASA+

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 33ns
• Current - Peak: 3A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 125V
• Voltage - Supply: 8 V ~ 12.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC
• Rise Time: 50 ns
• Fall Time: 40 ns
• Supply Voltage (min): 8 V
• Supply Current: 2.75 mA
• Maximum Power Dissipation: 1904 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Maximum Turn-off Delay Time: 30 ns
• Maximum Turn-on Delay Time: 33 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The MAX15018_/MAX15019_ drivers contain low on-
resistance p-channel and n-channel devices in a totem
pole configuration for the driver output stage. This
allows for rapid turn-on and turn-off of high gate-charge
(Q
The drivers exhibit low drain-to-source resistance
(R
and for lower operating temperatures. Lower R
means higher source and sink currents from the IC,
and results in faster switching speeds, since the exter-
nal MOSFET gate capacitance will charge and dis-
charge at a quicker rate. The peak source and sink
current provided by the drivers is typically 3A.
Propagation delay from the logic inputs to the driver
outputs is matched to within 8ns (max) between the
low-side and high-side drivers. Turn-on and turn-off
propagation delays are typically 35ns and 36ns. See
Figure 1. The internal drivers also contain break-before-
make logic to eliminate shoot-through conditions that
would cause unnecessarily high operating supply cur-
rents, efficiency reduction, and voltage spikes at V
Voltage at DL is approximately equal to V
high state, and zero when in a low state. Voltage from
Figure 1. Timing Characteristics of Logic Inputs (MAX15018A/MAX15019A)
DS_ON
g
) external switching MOSFETs.
), which decreases for higher values of V
_______________________________________________________________________________________
IN_H
IN_L
DH
DL
V
V
IL
IL
Output Driver
DD
t
t
D_OFF1
D_OFF1
when in a
t
MATCH
Half-Bridge MOSFET Drivers
DS_ON
DD
= (t
D_ON2
DD
.
t
t
F
F
- t
D_ON1
DH to HS is approximately equal to V
diode drop of the integrated bootstrap diode when in a
high state, and zero when in a low state. The high-side
MOSFET’s continuous on-time is limited due to the
charge loss from the high-side driver’s quiescent cur-
rent. The maximum on-time is dependent on the size of
the bootstrap capacitor (C
V
An integrated diode between V
conjunction with an external bootstrap capacitor (C
to provide the voltage required to turn on the high-side
MOSFET (see the Typical Operating Circuit ). The inter-
nal diode charges the bootstrap capacitor from V
when the low-side switch is on, and isolates V
HS is pulled high when the high-side driver turns on.
The internal bootstrap diode has a typical forward volt-
age drop of 0.9V and has a 40ns (typ) turn-off/-on time.
The turn-off time (reverse recovery time) depends on
the reverse-recovery current and can be as low as
10ns. If a lower diode voltage-drop between V
BST is needed, connect an external Schottky diode
between V
) OR (t
BST_UVLO
125V/3A, High-Speed,
D_OFF2
- t
D_OFF1
DD
.
V
V
IH
IH
t
t
and BST.
D_ON1
D_ON2
)
Integrated Bootstrap Diode
t
t
R
R
BST
), I
90%
10%
90%
10%
DD
BST
and BST is used in
(190µA max), and
DD
minus the
DD
DD
when
BST
and
DD
9
)